參數(shù)資料
型號(hào)： APT100GT120JRDLG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 123 A, 1200 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, ISOTOP-4
文件頁數(shù)： 2/9頁
文件大?。?/td> 228K
代理商： APT100GT120JRDLG
052-6351
Rev
A
7-2008
Dynamic Characteristic
APT100GT120JRDL(G)
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
C
ies
Input Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
-
6700
-
pF
C
oes
Output Capacitance
-
6530
-
C
res
Reverse Transfer Capacitance
-
4380
-
V
GEP
Gate-to-Emitter Plateau Voltage
Gate Charge
V
GE = 15V
V
CE= 600V
I
C = 100A
-
10.0
-
V
Q
g
Total Gate Charge
-
685
-
nC
Q
ge
Gate-Emitter Charge
-75
-
Q
gc
Gate-Collector Charge
-
400
-
SSOA
Switching Safe Operating Area
T
J = 150°C, RG = 1.0Ω
7, V
GE = 15V,
L = 100μH, V
CE= 1200V
200
A
t
d(on)
Turn-On Delay Time
Inductive Switching (25°C)
V
CC = 800V
V
GE = 15V
I
C = 100A
R
G = 4.7Ω
T
J = +25°C
-50
-
ns
t
r
Current Rise Time
-
100
-
t
d(off)
Turn-Off Delay Time
-
630
-
t
f
Current Fall Time
-36
-
E
on1
Turn-On Switching Energy 4
-
TBD
-
μJ
E
on2
Turn-On Switching Energy 5
-
17600
-
E
off
Turn-Off Switching Energy 6
-
7240
-
t
d(on)
Turn-On Delay Time
Inductive Switching (125°C)
V
CC = 800V
V
GE = 15V
I
C = 100A
R
G = 4.7Ω
T
J = 125°C
-50
-
ns
t
r
Current Rise Time
-
100
-
t
d(off)
Turn-Off Delay Time
-
710
-
t
f
Current Fall Time
-37
-
E
on1
Turn-On Switching Energy 4
-
TBD
-
μJ
E
on2
Turn-On Switching Energy 5
-
22380
-
E
off
Turn-Off Switching Energy 6
-
10950
-
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
R
θJC
Junction to Case (IGBT)
-
0.22
°C/W
R
θJC
Junction to Case (DIODE)
-
0.80
W
T
Package Weight
-
29.2
-
g
V
Isolation
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
2500
-
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance not including gate driver impedance.
Thermal and Mechanical Characteristics
Microsemi reserves the right to change, without notice, the specications and information contained herein.
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