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參數(shù)資料
| 型號： | APT100GT60B2R |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 148 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 167K |
| 代理商： | APT100GT60B2R |
Symbol
Parameter
Ratings
Unit
V
CES
Collector-Emitter Voltage
600
Volts
V
GE
Gate-Emitter Voltage
±30
I
C1
Continuous Collector Current @ T
C = 25°C
148
Amps
I
C2
Continuous Collector Current @ T
C = 100°C
80
I
CM
Pulsed Collector Current 1
300
SSOA
Switching Safe Operating Area @ T
J = 150°C
300A @ 600V
P
D
Total Power Dissipation
500
Watts
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
Maximum Ratings
All Ratings: T
C = 25°C unless otherwise specied.
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
V
(BR)CES
Collector-Emitter Breakdown Voltage (V
GE = 0V, IC = 4mA)
600
-
Volts
V
GE(TH)
Gate Threshold Voltage (V
CE = VGE, IC = 1.5mA, Tj = 25°C)
345
V
CE(ON)
Collector Emitter On Voltage (V
GE = 15V, IC = 100A, Tj = 25°C)
1.7
2.1
2.5
Collector Emitter On Voltage (V
GE = 15V, IC = 100A, Tj = 125°C)
-
2.5
-
I
CES
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
--
25
μA
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
-
1000
I
GES
Gate-Emitter Leakage Current (V
GE = ±30V)
-
300
nA
Static Electrical Characteristics
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
.
Microsemi Website - http://www.microsemi.com
052-6297
Rev
B
6
-
2010
APT100GT60B2R(G)
APT100GT60LR(G)
600V, 100A, VCE(ON) = 2.1V Typical
Thunderbolt IGBT
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-
ness and ultrafast switching speed.
Features
Low Forward Voltage Drop
Low Tail Current
Integrated Gate Resistor
Low EMI, High Reliability
RoHS Compliant
RBSOA and SCSOA Rated
High Frequency Switching to 50KHz
Ultra Low Leakage Current
G
C
E
G
C
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| APT100GT60B2RG | 功能描述:IGBT 600V 148A 500W SOT247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT100GT60JR | 功能描述:IGBT 600V 148A 500W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT100GT60JRDL | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT100GT60JRDQ4 | 功能描述:IGBT 600V 148A 500W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT100GT60LR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT |
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