參數(shù)資料
型號(hào)： APT100GT60B2R
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 148 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TMAX-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 167K
代理商： APT100GT60B2R
052-6297
Rev
B
6
-
2010
Dynamic Characteristic
APT100GT60B2R_LR(G)
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
C
ies
Input Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
-
5150
-
pF
C
oes
Output Capacitance
-
475
-
C
res
Reverse Transfer Capacitance
-
295
-
V
GEP
Gate-to-Emitter Plateau Voltage
Gate Charge
V
GE = 15V
V
CE= 300V
I
C = 100A
-
8.0
-
V
Q
g
Total Gate Charge 3
-
460
-
nC
Q
ge
Gate-Emitter Charge
-
40
-
Q
gc
Gate-Collector Charge
-
210
-
SSOA
Switching Safe Operating Area
T
J = 150°C, RG = 4.3Ω , VGE = 15V,
L = 100μH, V
CE= 600V
300
A
t
d(on)
Turn-On Delay Time
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 100A
R
G = 4.3Ω
T
J = +25°C
-40
-
ns
t
r
Current Rise Time
-
75
-
t
d(off)
Turn-Off Delay Time
-
320
-
t
f
Current Fall Time
-
100
-
E
on1
Turn-On Switching Energy 4
-
3250
-
μJ
E
on2
Turn-On Switching Energy 5
-
3525
-
E
off
Turn-Off Switching Energy 6
-
3125
-
t
d(on)
Turn-On Delay Time
Inductive Switching (125°C)
V
CC = 400V
V
GE = 15V
I
C = 100A
R
G = 4.3Ω
T
J = +125°C
-40
-
ns
t
r
Current Rise Time
-
75
-
t
d(off)
Turn-Off Delay Time
-
350
-
t
f
Current Fall Time
-
100
-
E
on1
Turn-On Switching Energy 4
-
3275
-
μJ
E
on2
Turn-On Switching Energy 5
-
4650
-
E
off
Turn-Off Switching Energy 6
-
3750
-
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
R
θJC
Junction to Case (IGBT)
-
0.25
°C/W
R
θJC
Junction to Case (DIODE)
-
N/A
W
T
Package Weight
-
29.2
-
g
Torque
Terminals and Mounting Screws
-
10
inlbf
-
1.1
Nm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance not including gate driver impedance.
Thermal and Mechanical Characteristics
Microsemi reserves the right to change, without notice, the specications and information contained herein.
相關(guān)PDF資料
PDF描述
APT100GT60LR 148 A, 600 V, N-CHANNEL IGBT, TO-264AA
APT106N60B2C6 106 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10M07JVR 225 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10M09B2VFRG 100 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10M09LVFR 100 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT100GT60B2RG 功能描述:IGBT 600V 148A 500W SOT247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT100GT60JR 功能描述:IGBT 600V 148A 500W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT100GT60JRDL 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube
APT100GT60JRDQ4 功能描述:IGBT 600V 148A 500W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT100GT60LR 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*