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參數(shù)資料
| 型號(hào)： | APT106N60B2C6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 106 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | APT106N60B2C6 |
050-7208
Rev
A
6-2010
MAXIMUM RATINGS
All Ratings per die: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
STATIC ELECTRICAL CHARACTERISTICS
Ultra Low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Dual die (parallel)
Popular T-MAX Package
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
G
D
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Microsemi Website - http://www.microsemi.com
APT106N60B2C6
600V 106A 0.035
Ω
Symbol
Parameter
APT106N60B2C6
UNIT
V
DSS
Drain-Source Voltage
600
Volts
I
D
Continuous Drain Current @ T
C = 25°C
1
106
Amps
Continuous Drain Current @ T
C = 100°C
68
I
DM
Pulsed Drain Current 2
318
V
GS
Gate-Source Voltage Continuous
±
20
Volts
P
D
Total Power Dissipation @ T
C = 25°C
833
Watts
T
J,TSTG
Operating and Storage Junction Temperature Range
-55 - to 150
°C
T
L
Lead Temperature: 0.063" from Case for 10 Sec.
260
I
AR
Avalanche Current 2
18.6
Amps
E
AR
Repetitive Avalanche Energy 3 ( Id = 18.6A, Vdd = 50V )
3.4
E
AS
Single Pulse Avalanche Energy
( Id = 18.6A, Vdd = 50V )
2200
mJ
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BV
(DSS)
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 500μA)
600
Volts
R
DS(on)
Drain-Source On-State Resistance 4 (V
GS = 10V, ID = 53A)
0.035
Ohms
I
DSS
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
50
μA
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
500
I
GSS
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
±200
nA
V
GS(th)
Gate Threshold Voltage (V
DS = VGS, ID = 3.4mA)
2.5
3
3.5
Volts
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