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參數(shù)資料
| 型號： | APT106N60B2C6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 106 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | APT106N60B2C6 |
050-7208
Rev
A
6-2010
Typical Performance Curves
APT106N60B2C6
0.60
0.70
0.80
0.90
1.00
1.10
1.20
-50
0
50
100
150
.85
.90
0.95
.00
.05
1.10
.15
1.20
-50
0
50
100
150
0
0.40
0.80
1.20
1.60
2.00
0
50
100
150
200
250
0
20
40
60
80
100
120
25
50
75
100
125
150
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
175
200
225
0
5
10
15
20
25
30
V
GS = 20V
T
J= 25°C
T
J= -55°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
I C
,DRAIN
CURRENT
(A)
T
J= 125°C
V
GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
I D
,DRAIN
CURRENT
(A)
T
C, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
I D
,DRAIN
CURRENT
(A)
I
D, DRAIN CURRENT (A)
FIGURE 4, R
DS(ON) vs Drain Current
T
J, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
BV
DSS
,DRAIN-T
O-SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
T
C, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
V
GS
(TH),
THRESHOLD
VOL
TAGE
(NORMALIZED)
0
0.50
1.00
1.50
2.00
2.50
3.00
-50 -25
0
25
50
75 100 125 150
T
J, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
R
DS(ON)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
(NORMALIZED)
V
GS = 10V
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 106A
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
0.1
1
10
100
1000
1
10
100
1000
100ms
100s
10ms
1ms
15V
4.5V
5.5V
5V
6.0V
6.5V
7.0V
10V
R
DS(on)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
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