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參數(shù)資料
| 型號： | APT106N60B2C6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 106 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | APT106N60B2C6 |
050-7208
Rev
A
6-2010
DYNAMIC CHARACTERISTICS
APT106N60B2C6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Continuous current limited by package lead temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature
3 Repetitive avalanche causes additional power losses that can be calculated as
PAV = EAR*f . Pulse width tp limited by Tj max.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery.
7 Maximum 125°C diode commutation speed = di/dt 600A/μs
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
10-5
10-4
10-3
10-2
0.1
1
10
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
Symbol Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
Input Capacitance
V
GS = 0V
V
DS = 25V
f = 1 MHz
8390
pF
C
oss
Output Capacitance
7115
C
rss
Reverse Transfer Capacitance
229
Q
g
Total Gate Charge 5
V
GS = 10V
V
DD = 300V
I
D = 106A @ 25°C
308
nC
Q
gs
Gate-Source Charge
50
Q
gd
Gate-Drain ("Miller") Charge
160
t
d(on)
Turn-on Delay Time
INDUCTIVE SWITCHING
V
GS = 15V
V
DD = 400V
I
D = 106A @ 25°C
R
G = 4.3Ω
25
ns
t
r
Rise Time
79
t
d(off)
Turn-off Delay Time
277
t
f
Fall Time
164
E
on
Turn-on Switching Energy 6
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 106A, RG = 4.3Ω
2995
μJ
E
off
Turn-off Switching Energy
3775
E
on
Turn-on Switching Energy 6
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D =106A, RG = 4.3Ω
4055
E
off
Turn-off Switching Energy
4200
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
I
S
Continuous Source Current (Body Diode)
92
Amps
I
SM
Pulsed Source Current 2 (Body Diode)
318
V
SD
Diode Forward Voltage 4 (V
GS = 0V, IS = -106A)
0.9
1.2
Volts
dv
/
dt
Peak Diode Recovery dv/
dt
7
15
V/ns
t
rr
Reverse Recovery Time
(I
S = -106A,
di
/
dt = 100A/μs)
T
j = 25°C
1400
ns
Q
rr
Reverse Recovery Charge
(I
S = -106A,
di
/
dt = 100A/μs)
T
j = 25°C
45
μC
I
RRM
Peak Recovery Current
(I
S = -106A,
di
/
dt = 100A/μs)
T
j = 25°C
47
Amps
Symbol
Characteristic
MIN
TYP
MAX
UNIT
R
θJC
Junction to Case
0.15
°C/W
R
θJA
Junction to Ambient
40
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