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參數(shù)資料
| 型號： | AM30LV0064DJ40WGIT |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| 中文描述： | 8M X 8 FLASH 3V PROM, 35 ns, PBGA40 |
| 封裝： | 8 X 15 MM, 0.80 MM PITCH, FBGA-40 |
| 文件頁數(shù)： | 24/41頁 |
| 文件大?。?/td> | 1067K |
| 代理商： | AM30LV0064DJ40WGIT |
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Am30LV0064D
edge of the command WE# pulse, the Flash device
will resume the Block Erase operation that was sus-
pended. Either the RY/BY# signal or the status register
may be used to determine when the Block Erase
completes.
After the block finishes the erase operation, the status
register bit I/O0 should be checked to verify that the
erase completed properly. Figure 11 is a simplified timing
diagram that describes how to execute an Erase Re-
sume operation during Erase Suspend to allow the
previously suspended block erase to complete. This is
an AMD superset command which is not available on
competitive devices in the marketplace.
Figure 11. Erase Suspend and Erase Resume
CE#
CLE
ALE
WE#
RE#
I/O7-0
SE#
RY/BY#
CMD
Block Address
Begin Block Erase
Complete Block Erase
CMD
Block Erase Setup (60h)
Block Erase (D0h)
Erase Resume (D0h)
As Appropriate
CMD
Block Erase Suspended Here
Read or Program
Operations may be performed
CMD
Erase Suspend (B0h)
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