參數(shù)資料
型號: AM30LV0064DJ40WGIT
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
中文描述: 8M X 8 FLASH 3V PROM, 35 ns, PBGA40
封裝: 8 X 15 MM, 0.80 MM PITCH, FBGA-40
文件頁數(shù): 20/41頁
文件大?。?/td> 1067K
代理商: AM30LV0064DJ40WGIT
20
Am30LV0064D
Read Status (70h)
The Read Status operation is used to read the device
status to determine if the device is ready, in the write
protect mode, erase suspended, or if the previous pro-
gram/erase operation completed without error. After
the rising edge of the command cycle WE# pulse, the
falling edge of CE# or RE#, whichever occurs last, will
output the contents of the status register on the 8 I/O
pins, I/O7–I/O0. The status register is constantly up-
dated and does not require either CE# or RE# to be
toggled. By utilizing the Read Status operation, multi-
ple devices with RY/BY# pins wired together may be
polled to determine their specific status.
Figure 6. Device Status Register Bit Definition
Figure 7. Read Status
Program Operations
Input Data (80h)
The Input Data command sequence is the first of two
operations that must be performed to program infor-
mation into one of the Flash pages. The second
operation, Page Program, is used to transfer informa-
tion from the Data Registers to the Flash array after
the Input Data procedure loads the Data Registers. In
order to set the starting region within the Data Regis-
ters (first half, second half, or Spare Area), the
appropriate command (00h, 01h, 50h) should be is-
sued prior to the Input Data command being
performed. If a command is not submitted to assign
the starting region, the starting region will be deter-
mined by its previous state.
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Program/Erase:
0 = pass, 1 = fail
Not Used
Erase Suspend:
0 = not suspended, 1 = suspended
Ready/Busy:
0 = busy, 1 = ready
Write Protect:
0 = protected, 1 = not protected
CE#
CLE
ALE
WE#
RE#
I/O7-0
SE#
RY/BY#
CMD
Read Status
Read Status
Read Status
Read Status
Read Status (70h)
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