參數(shù)資料
型號(hào)： 71V2556S100PFG8
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 128K X 36 ZBT SRAM, 5 ns, PQFP100
封裝： 14 X 20 MM, GREEN, PLASTIC, TQFP-100
文件頁(yè)數(shù)： 6/23頁(yè)
文件大小： 350K
代理商： 71V2556S100PFG8
6.42
14
IDT71V2556, 128K x 36, 3.3V Synchronous ZBT SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = 3.3V±5%, Commercial and Industrial Temperature Ranges)
NOTES:
1. tF = 1/tCYC.
2. Measured as HIGH above 0.6VDDQ and LOW below 0.4VDDQ.
3. Transition is measured ±200mV from steady-state.
4. These parameters are guaranteed with the AC load (Figure 1) by device characterization. They are not production tested.
5. To avoid bus contention, the output buffers are designed such that tCHZ (device turn-off) is about 1ns faster than tCLZ (device turn-on) at a given temperature and voltage.
The specs as shown do not imply bus contention because tCLZ is a Min. parameter that is worse case at totally different test conditions (0 deg. C, 3.465V) than tCHZ,
which is a Max. parameter (worse case at 70 deg. C, 3.135V).
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