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| 型號(hào)： | 71V2556S100PFG8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 128K X 36 ZBT SRAM, 5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, GREEN, PLASTIC, TQFP-100 |
| 文件頁(yè)數(shù)： | 5/23頁(yè) |
| 文件大?。?/td> | 350K |
| 代理商： | 71V2556S100PFG8 |
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6.42
IDT71V2556, 128K x 36, 3.3V Synchronous ZBT SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
13
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V±5%)
Figure 2. Lumped Capacitive Load, Typical Derating
AC Test Conditions
(VDDQ = 2.5V)
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range(1) (VDD = 3.3V±5%)
Figure 1. AC Test Load
AC Test Loads
NOTE:
1. The LBO, TMS, TDI, TCK & TRST pins will be internally pulled to VDD and ZZ will be internally pulled to VSS if it is not actively driven in the application.
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ – 0.2V, VLD = 0.2V. For other inputs VHD = VDD – 0.2V, VLD = 0.2V.
VDDQ/2
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