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參數(shù)資料
| 型號： | 28F320B3 |
| 廠商： | Intel Corp. |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 智能高級啟動3座4 - ，8 - ，16 - ，32 - Mbit閃存家庭 |
| 文件頁數(shù)： | 31/82頁 |
| 文件大小： | 749K |
| 代理商： | 28F320B3 |
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28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
25
The 12 V V
PP
mode enhances programming performance during the short time period typically
found in manufacturing processes; however, it is not intended for extended use. 12 V may be
applied to V
PP
during program and erase operations as specified in
Section 11.2,
“
Extended
Temperature Operation
”
on page 35
. V
PP
may be connected to 12 V for a total of t
PPH
hours
maximum. Stressing the device beyond these limits may cause permanent damage.
5.2
Programming Voltage Protection (V
PP
)
In addition to the flexible block locking, holding the V
PP
programming voltage low can provide
absolute hardware write protection of all flash-device blocks. If V
PP
is below V
PPLK
, program or
erase operations will result in an error displayed in the status register bit SR.3 (set to 1).
NOTE:
If the V
CC
supply can sink adequate current, an appropriately valued resistor can be used.
5.3
Enhanced Factory Programming (EFP)
EFP substantially improves device programming performance via a number of enhancements to
the conventional 12-volt word program algorithm. EFP's more efficient WSM algorithm eliminates
the traditional overhead delays of conventional word program mode in both the host programming
system and the flash device. Changes to the flowchart and internal routine were developed because
of today's beat-rate-sensitive manufacturing environments; a balance between programming speed
and cycling performance was struck.
After a single command sequence, host programmer bus cycles write data words followed by status
checks to determine when the next data word is ready to be accepted. This modification essentially
cuts write bus cycles in half. Following each internal program pulse, the WSM automatically
increments the device's address to the next physical location. Now, programming equipment can
sequentially stream program data throughout an entire block without having to setup and present
each new address. In combination, these enhancements reduce much of the host programmer
overhead, enabling more of a data streaming approach to device programming.
Additionally, EFP speeds up programming by performing internal code verification. With this,
PROM programmers can rely on the device to verify that it's been programmed properly. From the
device side, EFP streamlines internal overhead by eliminating the delays previously associated to
switch voltages between programming and verify levels at each memory-word location.
Figure 9. Example of V
PP
Power Supply Configurations
12 V fast programming
Absolute write protection with V
PP
≤
V
PPLK
System supply
(Note 1)
V
CC
V
PP
12 V supply
V
CC
V
PP
Low voltage and 12 V fast programming
System supply
12 V supply
Low-voltage programming
Absolute write protection via logic signal
System supply
V
CC
V
PP
Prot# (logic signal)
Low-voltage programming
System supply
V
CC
V
PP
≤
10K
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PDF描述 |
|---|---|
| 28F640P3 | Intel StrataFlash Embedded Memory |
| 28F320C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器) |
| 28F800C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器) |
| 28F160C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器) |
| 28F320D18 | 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 28F320C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| 28F320J3D75 | 制造商:undefined 功能描述: |
| 28F320J5 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| 28F320J5_02 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory |
| 28F320S3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
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