參數(shù)資料
型號: 28F320B3
廠商: Intel Corp.
英文描述: SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 智能高級啟動3座4 - ,8 - ,16 - ,32 - Mbit閃存家庭
文件頁數(shù): 17/82頁
文件大?。?/td> 749K
代理商: 28F320B3
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
11
NOTE:
Unassigned instruction codes should not be used. Intel reserves the right to redefine these codes for
future functions.
NOTES:
1. First cycle command addresses should be the same as the operation
s target address. Examples: the first-
cycle address for the Read ID Register command should be the same as the Identification Code address
(IA); the first cycle address for the Program command should be the same as the word address (WA) to be
programmed; the first cycle address for the Erase/Program Suspend command should be the same as the
address within the block to be suspended; etc.
XX = Any valid address within the device.
IA = Identification code address.
BA = Address within the block.
LPA = Lock Protection Address is obtained from the CFI (via the Read Query command). Intel
1.8 Volt
P
C
C0h
Protection Program
Setup
Prepares the WSM for a protection register program operation. The second bus cycle
latches address and data. To read array data after programming, issue a Read Array
command.
60h
Configuration
Setup
Prepares the WSM for device configuration. If Set Configuration Register is not the next
command, the WSM sets SR.4 and SR.5 to indicate command sequence error.
If the previous command was Configuration Setup (60h), the WSM writes data into the
configuration register via A
. Following a Set Configuration Register command,
subsequent read operations access array data.
03h
Set Configuration
Register
Table 4. Command Code and Descriptions (Sheet 2 of 2)
M
Instruction
Code
Command
Description
Table 5. Command Bus Definitions
M
Command
Bus
Cycles
First Bus Cycle
Second Bus Cycle
Oper
Addr
(1)
Data
(2,3)
Oper
Addr
(1)
Data
(2,3)
R
Read Array
1
Write
PnA
FFh
Read ID Register
2
Write
XnA
90h
Read
XnA+IA
IC
Read Query Register
2
Write
PnA
98h
Read
PnA+QA
QD
Read Status Register
2
Write
PnA
70h
Read
BA
SRD
Clear Status Register
1
Write
XX
50h
P
E
Block Erase
2
Write
BA
20h
Write
BA
D0h
Word Program
2
Write
WA
40h/10h
Write
WA
WD
Enhanced Factory Program
>2
Write
WA
30h
Write
WA
D0h
Program/Erase Suspend
1
Write
XX
B0h
Program/Erase Resume
1
Write
XX
D0h
L
Lock Block
2
Write
BA
60h
Write
BA
01h
Unlock Block
2
Write
BA
60h
Write
BA
D0h
Lock-Down Block
2
Write
BA
60h
Write
BA
2Fh
P
T
Protection Program
2
Write
PA
C0h
Write
PA
PD
Lock Protection Program
2
Write
LPA
C0h
Write
LPA
FFFDh
C
U
Set Configuration Register
2
Write
CD
60h
Write
CD
03h
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