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參數(shù)資料
| 型號(hào)： | 28F160C3 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 8M X 8 FLASH 3V PROM |
| 文件頁數(shù)： | 5/59頁 |
| 文件大?。?/td> | 321K |
| 代理商： | 28F160C3 |
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E
1.0
28F800C3, 28F160C3, 28F320C3
5
PRELIMINARY
INTRODUCTION
This document contains the specifications for the
3 Volt Advanced+ Boot Block flash memory family.
These flash memories add features which can be
used to enhance the security of systems: instant
block locking and a protection register.
Throughout this document, the term
“2.7 V” refers
to the full voltage range 2.7 V–3.6 V (except where
noted otherwise) and “V
PP
=
12 V” refers to 12 V
±5%. Sections 1 and 2 provide an overview of the
flash memory family including applications, pinouts,
pin descriptions and memory organization. Section
3 describes the operation of these products. Finally,
Section 4 contains the operating specifications.
1.1
3 Volt Advanced+ Boot Block
Flash Memory Enhancements
The 3 Volt Advanced+ Boot Block flash memory
features:
Zero-latency, flexible block locking
128-bit Protection Register
Simple
system
implementation
production programming with 2.7 V in-field
programming
Ultra-low power operation at 2.7 V
Minimum 100,000 block erase cycles
Common Flash Interface for software query of
device specs and features
for
12 V
Table 1. 3 Volt Advanced+ Boot Block Feature Summary
Feature
8 Mbit
(1)
, 16 Mbit, 32 Mbit
(2)
Reference
V
CC
Operating Voltage
2.7 V – 3.6 V
Table 8
V
PP
Voltage
Provides complete write protection with
optional 12 V Fast Programming
Table 8
V
CCQ
I/O Voltage
2.7 V– 3.6 V
Bus Width
16-bit
Table 2
Speed (ns)
8/16 Mbit: 90, 110 @ 2.7 V and 80, 100 @ 3.0 V
32 Mbit: 100, 110 @ 2.7 V and 90, 100 @ 3.0 V
Section 4.4
Blocking (top or bottom)
8 x 4-Kword parameter
8-Mb: 15 x 32-Kword main
16-Mb: 31 x 32-Kword main
32-Mb: 63 x 32-Kword main
Section 2.2
Appendix E
Operating Temperature
Extended: –40 °C to +85 °C
Table 8
Program/Erase Cycling
100,000 cycles
Table 8
Packages
48-Lead TSOP
48-Ball
μ
BGA* CSP
(1)
,
Easy BGA
Figures 1, 2 and 3
Block Locking
Flexible locking of any block with zero latency
Section 3.3
Protection Register
64-bit unique device number, 64-bit user programmable
Section 3.4
NOTES:
1.
2.
8-Mbit density not available in μBGA* CSP.
See Specification Update for changes to 32-Mbit devices (order 297938).
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| 28F320D18 | 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器) |
| 28F320J5 | 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器) |
| 28F640J5 | 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器) |
| 28F400B3 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 28F400BL-TB | 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160F3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| 28F160F3B95 | 制造商:Intel 功能描述: |
| 28F160S3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
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