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參數(shù)資料
| 型號： | 28F160C3 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
| 中文描述： | 8M X 8 FLASH 3V PROM |
| 文件頁數(shù)： | 48/59頁 |
| 文件大小： | 321K |
| 代理商： | 28F160C3 |
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28F800C3, 28F160C3, 28F320C3
E
48
PRELIMINARY
APPENDIX C
COMMON FLASH INTERFACE QUERY STRUCTURE
This appendix defines the data structure or
“database” returned by the Common Flash Interface (CFI) Query
command. System software should parse this structure to gain critical information such as block size, density,
x8/x16, and electrical specifications. Once this information has been obtained, the software will know which
command sets to use to enable flash writes, block erases, and otherwise control the flash component. The
Query is part of an overall specification for multiple command set and control interface descriptions called
Common Flash Interface, or CFI.
C.1
QUERY STRUCTURE OUTPUT
The Query “database” allows system software to gain information for controlling the flash component. This
section describes the device’s CFI-compliant interface that allows the host system to access Query data.
Query data are always presented on the lowest-order data outputs (DQ
0-7
) only. The numerical offset value is
the address relative to the maximum bus width supported by the device. On this family of devices, the Query
table device starting address is a 10h, which is a word address for x16 devices.
For a word-wide (x16) device, the first two bytes of the Query structure, “Q” and ”R” in ASCII, appear on the
low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00H data on upper bytes. Thus,
the device outputs ASCII “Q” in the low byte (DQ
0-7
) and 00h in the high byte (DQ
8-15
).
At Query addresses containing two or more bytes of information, the least significant data byte is presented
at the lower address, and the most significant data byte is presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal notation, so the “h” suffix
has been dropped. In addition, since the upper byte of word-wide devices is always “00h,” the leading “00”
has been dropped from the table notation and only the lower byte value is shown. Any x16 device outputs can
be assumed to have 00h on the upper byte in this mode.
Table C1. Summary of Query Structure Output As a Function of Device and Mode
Device
Hex
Offset
10:
11:
12:
Code
ASCII
Value
“Q”
“R”
“Y”
Device Addresses
51
52
59
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F320D18 | 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器) |
| 28F320J5 | 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲器) |
| 28F640J5 | 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲器) |
| 28F400B3 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 28F400BL-TB | 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160F3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| 28F160F3B95 | 制造商:Intel 功能描述: |
| 28F160S3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
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