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參數(shù)資料
| 型號： | 28F160C3 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
| 中文描述： | 8M X 8 FLASH 3V PROM |
| 文件頁數(shù)： | 22/59頁 |
| 文件大?。?/td> | 321K |
| 代理商： | 28F160C3 |
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28F800C3, 28F160C3, 28F320C3
E
22
PRELIMINARY
Attempts to address Protection Program commands
outside the defined protection register address
space should not be attempted. This space is
reserved for future use. Attempting to program to a
previously locked protection register segment will
result in a status register error (program error bit
SR.4 and lock error bit SR.1 will be set to 1).
3.4.3
LOCKING THE PROTECTION
REGISTER
The user-programmable segment of the protection
register is lockable by programming Bit 1 of the
PR-LOCK location to 0. Bit 0 of this location is
programmed to 0 at the Intel factory to protect the
unique device number. This bit is set using the
Protection Program command to program
“FFFD” to
the PR-LOCK location. After these bits have been
programmed, no further changes can be made to
the values stored in the protection register.
Protection Program commands to a locked section
will result in a status register error (program error bit
SR.4 and Lock Error bit SR.1 will be set to 1).
Protection register lockout state is not reversible.
4 Words
Factory Programmed
4 Words
User Programmed
PR-LOCK
88H
85H
84H
81H
80H
0645_05
Figure 4. Protection Register Memory Map
3.5
V
PP
Program and Erase
Voltages
Intel 3 Volt Advanced+ Boot Block products provide
in-system programming and erase in the 1.65 V–
3.6 V range. For fast production programming, it
also includes a low-cost, backward-compatible 12 V
programming feature.
3.5.1
IMPROVED 12 VOLT PRODUCTION
PROGRAMMING
When V
PP
is between 1.65 V and 3.6 V, all program
and erase current is drawn through the V
CC
pin.
Note that if V
PP
is driven by a logic signal, V
IH
min =
1.65 V. That is, V
PP
must remain above 1.65 V to
perform in-system flash modifications. When V
PP
is
connected to a 12 V power supply, the device
draws program and erase current directly from the
V
PP
pin. This eliminates the need for an external
switching transistor to control the voltage V
PP
.
Figure 5 shows examples of how the flash power
supplies can be configured for various usage
models.
The 12 V V
PP
mode enhances programming
performance during the short period of time typically
found in manufacturing processes; however, it is
not intended for extended use. 12 V may be applied
to V
PP
during program and erase operations for a
maximum of 1000 cycles on the main blocks and
2500 cycles on the parameter blocks. V
PP
may be
connected to 12 V for a total of 80 hours maximum.
Stressing the device beyond these limits may cause
permanent damage.
3.5.2
V
≤
V
FOR COMPLETE
PROTECTION
In addition to the flexible block locking, the V
PP
programming voltage can be held low for absolute
hardware write protection of all blocks in the flash
device. When V
PP
is below V
PPLK
, any program or
erase operation will result in a error, prompting the
corresponding status register bit (SR.3) to be set.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160F3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| 28F160F3B95 | 制造商:Intel 功能描述: |
| 28F160S3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
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