參數(shù)資料
型號(hào): (Z)PSD813F3
英文描述: Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位閃速存儲(chǔ)器,16K位SRAM)
中文描述: Flash在系統(tǒng)可編程Mirocomputer外設(shè)(閃速,在系統(tǒng)可編程微控制器外圍器件,100萬位閃速存儲(chǔ)器,16K的位的SRAM)
文件頁數(shù): 97/130頁
文件大?。?/td> 650K
代理商: (Z)PSD813F3
Preliminary
PSD813F Family
93
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
t
NLNH
Warm RESET Active Low Time (Note 1)
150
ns
t
OPR
RESET High to Operational Device
120
ns
t
NLNH-PO
Power On Reset Active Low Time
(Note 2)
1
ms
Reset Timing
(5 V ± 10%)
NOTE:
1. t
CLCL
is the CLKIN clock period.
Microcontroller Interface – PSD813F AC/DC Parameters
(5V ±10% Versions)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
t
BVBH
Vstby Detection to Vstbyon Output High
20
μs
t
BXBL
VstbyOff Detection to Vstbyon
Output Low
20
μs
V
stbyon
Timing
(5 V ± 10%)
-90
-12
-15
Symbol
Parameter
Conditions
Min
Max
Min
Max
Min
Max
Unit
t
LVDV
ALE Access Time from
Power Down
120
135
150
ns
Maximum Delay from
APD Enable to Internal
PDN Valid Signal
t
CLWH
Using CLKIN Input
15
*
t
CLCL
(Note 1)
μs
Power Down Timing
(5 V ± 10%)
NOTE:
1. RESET will not reset Flash or EEPROM programming/erase cycles.
2. tNLNH-PO is 10 ms for devices manufactured before rev. A.
相關(guān)PDF資料
PDF描述
(Z)PSD813F2(中文) Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位和256K位閃速存儲(chǔ)器,16K位SRAM)
(Z)PSD813F3R(中文) Multi-Chip-Module to Monolithic Flash PSD(閃速,在系統(tǒng)可編程微控制器外圍器件,0M位閃速存儲(chǔ)器,無SRAM)
(Z)PSD813F2 Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位和256K位閃速存儲(chǔ)器,16K位SRAM)
(Z)PSD813F3R Multi-Chip-Module to Monolithic Flash PSD(閃速,在系統(tǒng)可編程微控制器外圍器件,0M位閃速存儲(chǔ)器,無SRAM)
1.5KA24A AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR
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