參數(shù)資料
型號(hào): (Z)PSD813F3
英文描述: Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位閃速存儲(chǔ)器,16K位SRAM)
中文描述: Flash在系統(tǒng)可編程Mirocomputer外設(shè)(閃速,在系統(tǒng)可編程微控制器外圍器件,100萬位閃速存儲(chǔ)器,16K的位的SRAM)
文件頁數(shù): 28/130頁
文件大?。?/td> 650K
代理商: (Z)PSD813F3
PSD813F Famly
Prelimnary
24
Figure 4. Software Data Protection Dsable Flow Chart
9.1.1.6.4 Write OTP Row
Writing to the OTP row (64 bytes) can only be done once per byte, and is enabled by an
instruction. This instruction is composed of three specific Write operations of data bytes at
three specific memory locations followed by the data to be stored in the OTP row (refer to
Table 9). During the write operations, address bit A6 must be zero, while address bits A5-A0
define the OTP Row byte to be written while any EEPROM Sector Select signal (EESi) is
active. Writing the OTP Row is allowed only when SDP mode is not enabled.
9.1.1.7 Programmng Flash Memory
Flash memory must be erased prior to being programmed. The MCU may erase Flash
memory all at once or by-sector, but not byte-by-byte. A byte of Flash memory erases to all
logic ones (FF hex), and its bits are programmed to logic zeros. Although erasing Flash
memory occurs on a sector basis, programming Flash memory occurs on a byte basis.
The PSD813F main Flash and optional boot Flash require the MCU to send an instruction
to program a byte or perform an erase function (see Table 9). This differs from EEPROM,
which can be programmed with simple MCU bus write operations (unless EEPROM SDP
mode is enabled).
Once the MCU issues a Flash memory program or erase instruction, it must check for the
status of completion. The embedded algorithms that are invoked inside the PSD813F
support several means to provide status to the MCU. Status may be checked using any of
three methods: Data Polling, Data Toggle, or the Ready/Busy output pin.
WRITE AAh to
Address 555h
WRITE 55h to
Address AAAh
WRITE 80h to
Address 555h
WRITE AAh to
Address 555h
WRITE 55h to
Address AAAh
WRITE 20h to
Address 555h
Page Write
Instruction
Unprotected State
after
tWC (Write Cycle time)
The
PSD813F
Functional
Blocks
(cont.)
相關(guān)PDF資料
PDF描述
(Z)PSD813F2(中文) Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位和256K位閃速存儲(chǔ)器,16K位SRAM)
(Z)PSD813F3R(中文) Multi-Chip-Module to Monolithic Flash PSD(閃速,在系統(tǒng)可編程微控制器外圍器件,0M位閃速存儲(chǔ)器,無SRAM)
(Z)PSD813F2 Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位和256K位閃速存儲(chǔ)器,16K位SRAM)
(Z)PSD813F3R Multi-Chip-Module to Monolithic Flash PSD(閃速,在系統(tǒng)可編程微控制器外圍器件,0M位閃速存儲(chǔ)器,無SRAM)
1.5KA24A AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR
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