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參數(shù)資料
| 型號(hào)： | ZTX849 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| 中文描述： | 5 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 封裝： | E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 60K |
| 代理商： | ZTX849 |
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
*
5 Amps continuous current
*
Up to 20 Amps peak current
*
Very low saturation voltages
APPLICATIONS
*
LCD backlight converter
*
Flash gun converters
*
Battery powered circuits
*
Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
5
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25°C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
80
120
V
I
C
=100
μ
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
80
120
V
IC=1
μ
A, RB
≤
1K
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
30
40
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
50
1
nA
μ
A
V
CB
=70V
V
CB
=70V, T
amb
=100°C
Collector Cut-Off Current
I
CER
R
≤
1K
50
1
nA
μ
A
V
CB
=70V
V
CB
=70V, T
amb
=100°C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
25
50
110
180
50
100
200
220
mV
mV
mV
mV
I
C
=0.5A, I
=20mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=5A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
930
1050
mV
I
C
=5A, I
B
=200mA*
E-Line
TO92 Compatible
3-291
C
ZTX849
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZTX849 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN E-LINE |
| ZTX849STOA | 功能描述:兩極晶體管 - BJT NPN Big Chip SELine RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX849STOB | 功能描述:兩極晶體管 - BJT NPN Big Chip SELine RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX849STZ | 功能描述:兩極晶體管 - BJT NPN Big Chip SELine RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX851 | 功能描述:兩極晶體管 - BJT NPN Big Chip SELine RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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