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參數(shù)資料
| 型號： | ZTX857 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| 中文描述： | 3 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | ZTX857 |
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
*
300 Volt V
CEO
*
3 Amps continuous current
*
Up to 5 Amps peak current
*
Very low saturation voltage
*
P
tot
= 1.2 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
330
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
5
A
Continuous Collector Current
I
C
3
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25°C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
330
475
V
I
C
=100
μ
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
330
475
V
IC=1
μ
A, RB
≤
1K
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
300
350
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
50
1
nA
μ
A
V
CB
=300V
V
CB
=300V, T
amb
=100°C
Collector Cut-Off Current
I
CER
R
≤
1K
50
1
nA
μ
A
V
CB
=300V
V
CB
=300V, T
amb
=100°C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
50
80
140
170
100
140
200
250
mV
mV
mV
mV
I
C
=0.5A, I
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=3A, I
B
=600mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
870
1000
mV
I
C
=2A, I
B
=200mA*
E-Line
TO92 Compatible
3-303
C
ZTX857
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