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參數(shù)資料
| 型號： | ZTX953 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| 中文描述： | 3.5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 64K |
| 代理商： | ZTX953 |
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 4 JUNE 94
FEATURES
*
3.5 Amps continuous current
*
Up to 10 Amps peak current
*
Very low saturation voltage
*
Excellent gain up to 10 Amps
*
Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-10
A
Continuous Collector Current
I
C
-3.5
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25°C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-140
-170
V
I
C
=-100
μ
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
-140
-170
V
IC=-1
μ
A, RB
≤
1K
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-100
-120
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
μ
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
Collector Cut-Off Current
I
CER
R
≤
1K
-50
-1
nA
μ
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-20
-80
-140
-250
-50
-100
-170
-330
mV
mV
mV
mV
I
C
=-100mA, I
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-960
-1100
mV
I
C
=-4A, I
B
=-400mA*
E-Line
TO92 Compatible
3-318
C
ZTX953
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