參數(shù)資料
型號： ZTX968
廠商： ZETEX PLC
元件分類： 功率晶體管
英文描述： PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
中文描述： 4.5 A, 12 V, PNP, Si, POWER TRANSISTOR, TO-92
封裝： E-LINE PACKAGE-3
文件頁數(shù)： 1/3頁
文件大小： 98K
代理商： ZTX968
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
FEATURES
*
4.5 Amps continuous current
*
Up to 20 Amps peak current
*
Very low saturation voltage
*
High gain
*
Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-4.5
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25°C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-15
-28
V
I
C
=-100
μ
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
-20
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
μ
A
V
CB
=-12V
V
CB
=-12V, T
amb
=100°C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-50
-100
-220
-100
-150
-300
mV
mV
mV
I
C
=-500mA, I
=-5mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-5A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-930
-1050
mV
I
C
=-5A, I
B
=-200mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-830
-1000
mV
IC=-5A, V
CE
=-1V*
E-Line
TO92 Compatible
3-333
C
ZTX968
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