- 您現(xiàn)在的位置：買賣IC網 > PDF目錄373834 > ZTX951 (ZETEX PLC) PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | ZTX951 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 63K |
| 代理商： | ZTX951 |
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 4 JUNE 94
*
*
*
*
*
4 Amps continuous current
Up to 15 Amps peak current
Very low saturation voltage
Excellent gain up to 10 Amps
Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-15
A
Continuous Collector Current
I
C
-4
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25°C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-100
-140
V
I
C
=-100
μ
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
-100
-140
V
IC=-1
μ
A, RB
≤
1K
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-60
-90
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
μ
A
V
CB
=-80V
V
CB
=-80V, T
amb
=100°C
Collector Cut-Off Current
I
CER
R
≤
1K
-50
-1
nA
μ
A
V
CB
=-80V
V
CB
=-80V, T
amb
=100°C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-15
-60
-120
-220
-50
-100
-160
-300
mV
mV
mV
mV
I
C
=-100mA, I
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-960
-1100
mV
I
C
=-4A, I
B
=-400mA*
E-Line
TO92 Compatible
3-315
C
ZTX951
相關PDF資料 |
PDF描述 |
|---|---|
| ZTX953 | PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| ZTX955 | PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| ZTX956 | PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| ZTX957 | PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| ZTX958 | PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ZTX951STOA | 功能描述:兩極晶體管 - BJT PNP Big Chip SELine RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX951STOB | 功能描述:兩極晶體管 - BJT PNP Big Chip SELine RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX951STZ | 功能描述:兩極晶體管 - BJT PNP Big Chip SELine RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX953 | 功能描述:兩極晶體管 - BJT PNP Big Chip SELine RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX953 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP E-LINE |
發(fā)布緊急采購，3分鐘左右您將得到回復。