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參數(shù)資料
| 型號(hào)： | X4C105V20-VTRIP |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁(yè)數(shù)： | 15/19頁(yè) |
| 文件大?。?/td> | 258K |
| 代理商： | X4C105V20-VTRIP |
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X4C105
Characteristics subject to change without notice.
15 of 19
REV 1.0.1 6/14/01
www.xicor.com
NOVRAM WRITE CYCLE SPECIFICATIONS
NOVRAM Write Cycle Limits V
CC
= 3.0V-3.6V, T
A
= -40°C to +85°C
Note:
(10)t
LZ
and t
OLZ
min.; t
SOE
and t
HOE
min; and t
HZ
and t
OHZ
are periodically sampled and not 100% tested. t
HZ
max. and t
OHZ
max. are
measured, with CL = 5pF, from the point when CE or OE return high (whichever occurs first) to the time when the outputs are no
longer driven.
Symbol
t
WC
t
WC1
t
OES
t
OEH
t
CW
t
CE
t
CH
t
WP
t
WP1
t
WPH
t
DS
t
DH
t
NDO
t
SOE
(10)
t
HOE
(10)
t
WZ
t
OW
t
CHZ
(10)
t
OHZ
(10)
Parameter
Min.
120
170
50
50
50
0
0
50
100
50
40
0
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
Write cycle time
Write cycle time
Output enable HIGH setup time
Output enable HIGH hold time
Chip enable to end of write input
Write setup time
Write hold time
Write pulse width
Write pulse width
Write pulse HIGH recovery time
Data setup to end of write
Data hold time
New data output
OE setup prior to operation in 2-wire mode
OE hold following operation in 2-wire mode
Write enable to output in HIGH-Z
Output active from end of write
Chip disable to output in high Z
Output disable to output in high Z
50
100
100
50
0
0
0
50
50
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