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參數(shù)資料
| 型號(hào)： | X4C105V20-VTRIP |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁(yè)數(shù)： | 11/19頁(yè) |
| 文件大?。?/td> | 258K |
| 代理商： | X4C105V20-VTRIP |
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X4C105
Characteristics subject to change without notice.
11 of 19
REV 1.0.1 6/14/01
www.xicor.com
CAPACITANCE
T
A
= 25
°
C, f = 1.0 MHz, V
CC
= 3.0-3.6V
Note:
(4) This parameter is periodically sampled and not 100% tested.
SERIAL NONVOLATILE WRITE CYCLE TIMING
Note:
(5) t
WC
is the time from a valid stop condition at the end of a write sequence to the end of the self-timed internal nonvolatile write cycle.
It is the minimum cycle time to be allowed for any nonvolatile write by the user, unless acknowledge polling is used.
Symbol
C
I/O
(4)
C
IN
(4)
Parameter
Max.
8
6
Unit
pF
pF
Test Conditions
V
I/O
= 0V
V
IN
= 0V
Input/output capacitance (SDA, D0-D3, O0-O3)
Input capacitance (SCL, WP, CE, WE, OE, S1, S2)
Symbol
t
WC
(5)
Parameter
Min.
Typ.
(5)
3
Max.
5
Unit
ms
Write cycle time
SERIAL MEMORY AC CHARACTERISTICS
Serial AC Test Conditions
Equivalent AC Output Load Circuit for V
CC
= 3.0–3.6V
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
V
CC
x 0.1 to V
CC
x 0.9
10ns
V
CC
x 0.5
Standard output load
SDA
1533
100pF
3.3V
For V
OL
= 0.4V
and I
OL
= 2mA
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