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參數資料
| 型號： | X4C105V20-VTRIP |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數： | 14/19頁 |
| 文件大?。?/td> | 258K |
| 代理商： | X4C105V20-VTRIP |
X4C105
Characteristics subject to change without notice.
14 of 19
REV 1.0.1 6/14/01
www.xicor.com
NOVRAM READ CYCLE SPECIFICATIONS
Table 2. NOVRAM Read Cycle Limits
Note:
(9) t
LZ
and t
OLZ
min.; t
SOE
and t
HOE
min; and t
HZ
and t
OHZ
are periodically sampled and not 100% tested. t
HZ
max. and t
OHZ
max. are
measured, with CL = 5pF, from the point when CE or OE return high (whichever occurs first) to the time when the outputs are no
longer driven.
NOVRAM Read Cycle
Symbol
t
RC
t
CE
t
OE
t
OH
t
WES
t
WEH
t
LZ
(9)
t
OLZ
(9)
t
HZ
(9)
t
OHZ
(9)
t
SOE
(9)
t
HOE
(9)
Parameter
V
CC
= 3.0V-3.6V
-40°C to +85°C
Min.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
Max.
120
50
50
Read cycle time
Chip enable access time
Output enable access time
Output hold from CE or OE HIGH
Write enable HIGH setups time
Write enable HIGH hold time
Chip enable to output in low Z
Output enable to output in low Z
Chip disable to output in high Z
Output disable to output in high Z
OE setup prior to operation in 2-wire mode
OE hold following operation in 2-wire mode
0
25
25
0
0
0
0
100
100
50
50
t
OHZ
t
HZ
t
CE
t
OE
t
OLZ
t
LZ
OE
CE
WE
D0-D3
t
WES
t
WEH
t
OH
t
RC
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