參數(shù)資料
型號: X3100V28Z
廠商: INTERSIL CORP
元件分類: 電源管理
英文描述: 4-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO28
封裝: ROHS COMPLIANT, PLASTIC, MO-153AE, TSSOP-28
文件頁數(shù): 18/41頁
文件大?。?/td> 561K
代理商: X3100V28Z
25
FN8110.1
January 3, 2008
EEPROM Write Sequence (EEWRITE)
Prior to any attempt to write data into the EEPROM of
the X3100 or X3101, the “Write Enable” latch must first
be set by issuing the WREN instruction (See Table 30
and Figure 9). CS is first taken LOW. Then the WREN
instruction is clocked into the X3100 or X3101. After all
eight bits of the instruction are transmitted, CS must
then be taken HIGH. If the user continues the write
operation without taking CS HIGH after issuing the
WREN instruction, the write operation will be ignored.
To write data to the EEPROM memory array, the user
issues the EEWRITE instruction, followed by the 16 bit
address and the data to be written. Only the last 9 bits
of the address are used and bits [15:9] are specified to
be zeroes. This is minimally a thirty-two clock opera-
tion. CS must go LOW and remain LOW for the dura-
tion of the operation. The host may continue to write
up to 16 bytes of data to the X3100 or X3101. The only
restriction is the 16 bytes must reside on the same
page. If the address counter reaches the end of the
page and the clock continues, the counter will “roll
over” to the first address of the page and overwrite any
data that may have been previously written.
For a byte or page write operation to be completed,
CS can only be brought HIGH after bit 0 of the last
data byte to be written is clocked in. If it is brought
HIGH at any other time, the write operation will not be
completed. Refer to Figure 10 and Figure 11 for
detailed illustration of the write sequences and time
frames in which CS going HIGH are valid.
EEPROM Read Status Operation (EEREAD STAT)
If there is not a nonvolatile write in progress, the
EEREAD STAT instruction returns the IDLock byte
from the IDLock register which contains the IDLock
bits IDL2-IDL0 (Table 29). The IDLock bits define the
IDLock condition (Table 28). The other bits are
reserved and will return ‘0’ when read.
If a nonvolatile write to the EEPROM (i.e. EEWRITE
instruction) is in progress, the EEREAD STAT returns
a HIGH on SO. When the nonvolatile write cycle in
the EEPROM is completed, the status register data is
read out.
Clocking SCK is valid during a nonvolatile write in
progress, but is not necessary. If the SCK line is
clocked, the pointer to the status register is also
clocked, even though the SO pin shows the status of
the nonvolatile write operation (See Figure 12).
Figure 10. EEPROM Byte Write (EEWRITE) Operation Sequence
012
345
678
9
CS
SCK
SI
SO
High Impedance
EEWRITE Instruction
(1 Byte)
Byte Address (2 Byte)
Data Byte
15 14
3
210
20 21 22 23 24 25 26 27 28 29 30 31
76
543
210
X3100, X3101
相關PDF資料
PDF描述
X40420S14-A 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO14
X4163S8Z 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
X4165V8-2.7 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
X4165S8-4.5A 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
X5001S8-1.8 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
相關代理商/技術參數(shù)
參數(shù)描述
X3101 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:3 or 4 Cell Li-Ion Battery Protection and Monitor IC
X3101PT-V 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:3 or 4 Cell Li-Ion Battery Protection and Monitor IC
X3101V28 功能描述:IC PROTECT/MONITOR 3CELL 28TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - 電池管理 系列:- 標準包裝:1 系列:- 功能:充電管理 電池化學:鋰離子(Li-Ion)、鋰聚合物(Li-Pol) 電源電壓:3.75 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A,SOT-753 供應商設備封裝:SOT-23-5 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:669 (CN2011-ZH PDF) 其它名稱:MCP73831T-2ACI/OTCT
X3101V28C7988 制造商:Rochester Electronics LLC 功能描述:- Bulk
X3101V28T1 功能描述:IC PROTECT/MONITOR 3CELL 28TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - 電池管理 系列:- 標準包裝:1 系列:- 功能:充電管理 電池化學:鋰離子(Li-Ion)、鋰聚合物(Li-Pol) 電源電壓:3.75 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A,SOT-753 供應商設備封裝:SOT-23-5 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:669 (CN2011-ZH PDF) 其它名稱:MCP73831T-2ACI/OTCT