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參數(shù)資料
| 型號(hào)： | W947D6HBHX6E |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 |
| 文件頁(yè)數(shù)： | 58/60頁(yè) |
| 文件大?。?/td> | 1160K |
| 代理商： | W947D6HBHX6E |
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W947D6HB / W947D2HB
128Mb Mobile LPDDR
Publication Release Date:Jun,17, 2011
- 7 -
Revision A01-003
SIGNAL NAME
TYPE
FUNCTION
DESCRIPTION
CKE
Input
Clock Enable
CKE HIGH activates, and CKE LOW deactivates internal clock
signals, and device input buffers and output drivers. Taking CKE
LOW provides PRECHARGE, POWER DOWN and SELF
REFRESH operation (all banks idle), or ACTIVE POWER DOWN
(row ACTIVE in any bank). CKE is synchronous for all functions
except for SELF REFRESH EXIT, which is achieved
asynchronously. Input buffers, excluding CK, CK and CKE, are
disabled during power down and self refresh mode which are
contrived for low standby power consumption.
LDQS, UDQS
(x16);
DQS0~DQS3
(x32)
I/O
Data Strobe
Output with read data, input with write data. Edge-aligned with
read data, centered with write data. Used to capture write data.
x16:
LDQS: DQ0~DQ7; UDQS: DQ8~DQ15.
x32:
DQS0: DQ0~DQ7; DQS1: DQ8~DQ15;
DQS2: DQ16~DQ23; DQS3: DQ24~DQ31.
VDD
Supply
Power
Power supply for input buffers and internal circuit.
VSS
Supply
Ground
Ground for input buffers and internal circuit.
VDDQ
Supply
Power for I/O
Buffer
Power supply separated from VDD, used for output drivers to
improve noise.
VSSQ
Supply
Ground for I/O
Buffer
Ground for output drivers.
NC
-
No Connect
Non connection pin.
4.2 Addressing Table
ITEM
128Mb
Number of banks
4
Bank address pins
BA0,BA1
Auto precharge pin
A10/AP
X16
Row addresses
A0-A11
Column addresses
A0-A8
tREFI (s)
15.6
x32
Row addresses
A0-A11
Column addresses
A0-A7
tREFI (s)
15.6
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| W9712G8JB-3 | DDR DRAM, PBGA60 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W947D6HBHX6G | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128Mb Mobile LPDDR |
| W948D2FB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPDDR |
| W948D2FBJX5E | 功能描述:IC LPDDR SDRAM 256MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| W948D2FBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ |
| W948D2FBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
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