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參數(shù)資料
| 型號： | W947D6HBHX6E |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 |
| 文件頁數(shù)： | 20/60頁 |
| 文件大?。?/td> | 1160K |
| 代理商： | W947D6HBHX6E |
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W947D6HB / W947D2HB
128Mb Mobile LPDDR
Publication Release Date:Jun,17, 2011
- 27 -
Revision A01-003
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results
in a reduction of total row-access overhead. The minimum time interval between two successive ACTIVE commands
on different banks is defined by tRRD.
The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Precharge) is
issued to the bank.
A PRECHARGE (or READ with Auto Precharge or Write with Auto Precharge) command must be issued before
opening a different row in the same bank.
7.4.2 Bank Activation Command Cycle
NOP
ACT
NOP
RD/WR
Row
Col
BA x
BA y
tRCD
tRRD
= Don't Care
CK
Command
A0-An
BA0,BA1
7.5. Read
The READ command is used to initiate a burst read access to an active row, with a burst length as set in the Mode
Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10
determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be
pre-charged at the end of the read burst; if Auto Pre-charge is not selected, the row will remain open for subsequent
accesses.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W9602BB | PUSHBUTTON SWITCH, SPST, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED |
| W9605BB | PUSHBUTTON SWITCH, SPST, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED |
| W9606BB | PUSHBUTTON SWITCH, SPDT, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED |
| W9712G8JB-3 | DDR DRAM, PBGA60 |
| W971GG6IB-25 | 32M X 16 DDR DRAM, 0.4 ns, PBGA84 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W947D6HBHX6G | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128Mb Mobile LPDDR |
| W948D2FB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPDDR |
| W948D2FBJX5E | 功能描述:IC LPDDR SDRAM 256MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| W948D2FBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ |
| W948D2FBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
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