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參數(shù)資料
| 型號： | W9425G8DH-6 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 8 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 |
| 文件頁數(shù)： | 22/53頁 |
| 文件大?。?/td> | 1920K |
| 代理商： | W9425G8DH-6 |
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W9425G8DH
Publication Release Date: Nov. 20, 2007
- 29 -
Revision A4
Notes:
(1)
Conditions outside the limits listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
(2)
All voltages are referenced to VSS, VSSQ.( 2.6V
±0.1V for DDR400)
(3)
Peak to peak AC noise on VREF may not exceed
±2% VREF(DC).
(4)
VOH = 1.95V, VOL = 0.35V
(5)
VOH = 1.9V, VOL = 0.4V
(6)
The values of IOH(DC) is based on VDDQ = 2.3V and VTT = 1.19V.
The values of IOL(DC) is based on VDDQ = 2.3V and VTT = 1.11V.
(7)
These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values
of tCK and tRC.
(8)
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors is expected to be set
equal to VREF and must track variations in the DC level of VREF.
(9)
These parameters depend on the output loading. Specified values are obtained with the output open.
(10) Transition times are measured between VIH min(AC) and VIL max(AC).Transition (rise and fall) of input signals have a fixed
slope.
(11) IF the result of nominal calculation with regard to tCK contains more than one decimal place, the result is rounded up to
the nearest decimal place.
(i.e., TDQSS = 0.75
× tCK, tCK = 7.5 nS, 0.75 × 7.5 nS = 5.625 nS is rounded up to 5.6 nS.)
(12) VX is the differential clock cross point voltage where input timing measurement is referenced.
(13) VID is magnitude of the difference between CLK input level and CLK input level.
(14) VISO means {VICK(CLK)+VICK( CLK )}/2.
(15) Refer to the figure below.
CLK
VSS
VICK
VX
VICK
VID(AC)
0 V Differential
VISO
VISO(min)
VISO(max)
VSS
(16) tAC and tDQSCK depend on the clock jitter. These timing are measured at stable clock.
(17) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
(18) tDAL = (tWR/tCK) + (tRP/tCK)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9425G8EH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M × 4 BANKS × 8 BITS DDR SDRAM |
| W946432AD | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 4 BANKS X 32 BITS DDR SDRAM |
| W9464G6IB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M × 4 BANKS × 16 BITS DDR SDRAM |
| W9464G6IH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M ?? 4 BANKS ?? 16 BITS DDR SDRAM |
| W9464G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M ? 4 BANKS ? 16 BITS DDR SDRAM |
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