參數(shù)資料
型號： W9412G6IH-6I
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝： 0.400 INCH, ROHS COMPLIANT, TSOP2-66
文件頁數(shù)： 16/53頁
文件大?。?/td> 825K
代理商： W9412G6IH-6I
W9412G6IH
Publication Release Date: Sep. 16, 2009
- 23 -
Revision A06
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
Input/Output Voltage
VIN, VOUT
-0.3 ~ VDDQ + 0.3
V
Power Supply Voltage
VDD, VDDQ
-0.3 ~ 3.6
V
Operating Temperature (-4/-5/-6)
TOPR
0 ~ 70
°C
Operating Temperature (-5I/-6I)
TOPR
-40 ~ 85
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Soldering Temperature (10s)
TSOLDER
260
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOUT
50
mA
Note: Stresses greater than those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -4/-5/-6, TA = -40 to 85°C for -5I/-6I)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
NOTES
VDD
Power Supply Voltage (for -5/-6)
2.3
2.5
2.7
V
2
VDD
Power Supply Voltage (for -4)
2.4
2.5
2.6
V
2
VDDQ
I/O Buffer Supply Voltage (for -5/-6)
2.3
2.5
2.7
V
2
VDDQ
I/O Buffer Supply Voltage (for
-4)
2.4
2.5
2.6
V
2
VREF
Input reference Voltage
0.49 x VDDQ
0.50 x VDDQ
0.51 x VDDQ
V
2, 3
VTT
Termination Voltage (System)
VREF - 0.04
VREF
VREF + 0.04
V
2, 8
VIH (DC)
Input High Voltage (DC)
VREF + 0.15
-
VDDQ + 0.3
V
2
VIL (DC)
Input Low Voltage (DC)
-0.3
-
VREF - 0.15
V
2
VICK (DC)
Differential Clock DC Input Voltage
-0.3
-
VDDQ + 0.3
V
15
VID (DC)
Input Differential Voltage.
CLK and CLK inputs (DC)
0.36
-
VDDQ + 0.6
V
13, 15
VIH (AC)
Input High Voltage (AC)
VREF + 0.31
-
V
2
VIL (AC)
Input Low Voltage (AC)
-
VREF - 0.31
V
2
VID (AC)
Input Differential Voltage.
CLK and CLK inputs (AC)
0.7
-
VDDQ + 0.6
V
13, 15
VX (AC)
Differential AC input Cross Point Voltage
VDDQ/2 - 0.2
-
VDDQ/2 + 0.2
V
12, 15
VISO (AC)
Differential Clock AC Middle Point
VDDQ/2 - 0.2
-
VDDQ/2 + 0.2
V
14, 15
Notes: Undershoot Limit: VIL (min) = -1.5V with a pulse width < 5 nS
Overshoot Limit: VIH (max) = VDDQ +1.5V with a pulse width < 5 nS
VIH (DC) and VIL (DC) are levels to maintain the current logic state.
VIH (AC) and VIL (AC) are levels to change to the new logic state.
相關PDF資料
PDF描述
WS512K32L-15G2LQ 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
WS512K32L-15G2UI 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
WS512K32L-20H1Q 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66
WS512K32L-17H1Q 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66
WS512K32L-15G4TIA 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
相關代理商/技術參數(shù)
參數(shù)描述
W9412G6JH 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM
W9412G6JH-4 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP
W9412G6JH-5 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1
W9412G6JH-5I 功能描述:IC DDR SDRAM 128MBIT 66TSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x20） 包裝:托盤
W9412G6JH-5TR 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*