參數(shù)資料
型號(hào)： W28J161TB90L
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝： 8 X 8 MM, 0.75 MM PITCH, TFBGA-48
文件頁數(shù)： 23/43頁
文件大小： 1333K
代理商： W28J161TB90L
W28J161B/T
1. GENERAL DESCRIPTION
The W28J161B/T Flash memory chip is a high-density, cost-effective, nonvolatile, read/write storage
device suited for a wide range of applications. It operates off of VDD = 2.7V to 3.6V, with VPP of 2.7V to
3.6V or 11.7V to 12.3V. This low voltage operation capability enbales use in low power applications.
The IC features a boot, parameter and main-blocked architecture, as well as low voltage and
extended cycling. These features provide a highly flexible device suitable for portable terminals and
personal computers. Additionally, the enhanced suspend capabilities provide an ideal solution for both
code and data storage applications. For secure code storage applications, such as networking where
code is either directly executed out of flash or downloaded to DRAM, the device offers four levels of
protection. These are: absolute protection, enabled when VPP ≤ VPPLK; selective hardware blocking;
flexible software blocking; or write protection. These alternatives give designers comprehensive
control over their code security needs. The device is manufactured using 0.25
m process technology.
It comes in chip-size package: the 0.75 mm pitch 48-ball TFBGA, which makes it ideal for small real
estate applications.
2. FEATURES
Low Voltage Operation
VDD = VPP = 2.7V to 3.6V Single Voltage
16bit I/O Interface
High-Performance Read Access Time
90 nS (VDD = 2.7V to 3.6V)
Operating Temperature
-40° C to +85° C
Low Power Management
2 A (VDD = 3.0V)Typical Standby Current
Automatic Power Savings Mode Decreases
ICCR in Static Mode
120 A (VDD = 3.0V, TA =+25° C,
f=32kHz)Typical Read Current
Optimized Array Blocking Architecture
Two 4k-word Boot Blocks
Six 4k-word Parameter Blocks
Thirty-one 32k-word Main Blocks
Top or Bottom Boot Location
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
Enhanced Automated Suspend Options
Word Write Suspend to Read
Block Erase Suspend to Word Write
Block Erase Suspend to Read
Enhanced Data Protection Features
Absolute Protection with VPP ≤ VPPLK
Block Erase, Full Chip Erase, Word Write
and Lock-Bit Configuration Lockout during
Power Transitions
Block Locking with Command and #WP
Permanent Locking
Automated Block Erase, Full Chip Erase, Low
Power Management Word Write and Lock-Bit
Configuration
Command User Interface (CUI)
Status Register (SR)
SRAM-Compatible Write Interface
Chip-Size Packaging
0.75 mm pitch 48-Ball TFBGA
Nonvolatile Flash Technology
CMOS Process (P-type silicon substrate)
Not designed or rated as radiation hardened
Publication Release Date: April 7, 2003
- 3 -
Revision A4
相關(guān)PDF資料
PDF描述
W28J161BB90L 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
W28J321BB90L 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
W29C010MP90B 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
W29C010MP90 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
W29C011AP15N 128K X 8 FLASH 5V PROM, 150 ns, PQCC32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W28NK60Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET
W28-SQ11A-10 功能描述:CIRCUIT BREAK 10A W/SWITCH RoHS:否 類別:過電壓，電流，溫度裝置 >> 斷路器 系列:W28 標(biāo)準(zhǔn)包裝:3 系列:AS168X 斷路器類型:熱磁動(dòng)式 電壓:65VDC，277/480VAC 電流 - 跳閘(It):30A 極數(shù):3 觸動(dòng)器類型:按片 安裝類型:DIN 軌道 其它名稱:4420.02104420.0210-ND486-2338AS168X-CB3G300-NDCBE AS168X-CB3G300
W28-SQ11A-15 制造商:TE Connectivity 功能描述:
W28-SQ11A-3 制造商:TE Connectivity 功能描述:Circuit Breaker Thermal 1Pole 3A 250VAC/32VDC
W28-SQ11A-5 制造商:TE Connectivity 功能描述:Circuit Breaker Thermal 1Pole 5A 250VAC/32VDC
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*