參數(shù)資料
型號(hào)： W25Q32BVDAAP
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 32M X 1 SPI BUS SERIAL EEPROM, PDIP8
封裝： 0.300 INCH, GREEN, PLASTIC, DIP-8
文件頁(yè)數(shù)： 39/79頁(yè)
文件大?。?/td> 1090K
代理商： W25Q32BVDAAP
W25Q32BV
- 44 -
DO
(IO
1)
7.2.24 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in Figure 22.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (52h)
8
9
29
30
31
24-Bit Address
23
22
2
1
0
High Impedance
*
Mode 0
Mode 3
= MSB
*
Figure 22. 32KB Block Erase Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W25Q32BVDAIG 32M X 1 SPI BUS SERIAL EEPROM, PDIP8
W25Q32BVSFIG 32M X 1 SPI BUS SERIAL EEPROM, PDSO16
W3EG6466S335BD4S 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
WEDF1M32B-70G2UC5A 1M X 32 FLASH 5V PROM MODULE, 70 ns, CQFP68
WE128K32P-140G2TI 128K X 32 EEPROM 5V MODULE, 125 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25Q32BVDAIG 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVDAIP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVSFAG 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVSFAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVSFIG 功能描述:IC SPI FLASH 32MBIT 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。