- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄68427 > W25P20-VSNI-G (WINBOND ELECTRONICS CORP) 2M X 1 FLASH 2.7V PROM, PDSO8 PDF資料下載
參數(shù)資料
| 型號： | W25P20-VSNI-G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| 封裝： | 0.150 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 14/35頁 |
| 文件大小： | 1405K |
| 代理商： | W25P20-VSNI-G |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當(dāng)前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
W25P10, W25P20 AND W25P40
Publication Release Date: November 28, 2005
- 21 -
Revision M
7.2.12 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 13.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered
within the time duration of tDP (See AC Characteristics). While in the power-down state only the
Release from Power-down / Device ID instruction, which restores the device to normal operation, will
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction makes the Power
Down state a useful condition for securing maximum write protection. The device always powers-up in
the normal operation with the standby current of ICC1.
Figure 13. Deep Power-down Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W25Q128BVFAP | 128M X 1 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q128BVEIP | 128M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q128BVFIP | 128M X 1 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q16CLSFIP | 16M X 1 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q16CLDAIG | 16M X 1 SPI BUS SERIAL EEPROM, PDIP8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25P20VSNIG T&R | 功能描述:IC FLASH 2MBIT 40MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25P222A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P222A-4 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P222A-4A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P222AD-4 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。