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參數(shù)資料
| 型號： | VP2020L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 200-V (D-S) MOSFETs |
| 中文描述： | P通道200 -五（副）的MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | VP2020L |
VP2020L, BSS92
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70210
S-04279
—
Rev. E, 16-Jun-01
Limits
VP2020L
BSS92
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V
GS
= 0 V, I
D
=
–
10 A
–
220
V
(BR)DSS
V
GS
= 0 V, I
D
=
–
250 A
V
DS
= V
GS
, I
D
=
–
1 mA
V
DS
= 0 V, V
GS
=
–
220
–
200
V
Gate-Threshold Voltage
V
GS(th)
–
1.9
–
0.8
–
2.5
–
0.8
–
2.8
20 V
10
100
Gate-Body Leakage
I
GSS
T
J
= 125 C
50
nA
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
–
1
T
J
= 125 C
–
100
Zero Gate Voltage
Drain Current
I
DSS
V
DS
=
–
200 V, V
GS
= 0 V
–
60
A
T
J
= 125 C
–
200
V
DS
=
–
60 V, V
GS
= 0 V
V
DS
=
–
10 V, V
GS
=
–
4.5 V
V
GS
=
–
10 V, I
D
=
–
0.1 A
V
GS
=
–
4.5 V, I
D
=
–
0.1 A
–
0.2
On-State Drain Current
b
I
D(on)
–
250
–
100
mA
11.5
20
15
20
Drain-Source
On-Resistance
b
r
DS(on)
T
J
= 125 C
28
40
V
GS
=
–
4.5 V, I
D
=
–
0.05 A
15
T
J
= 125 C
28
Forward
Transconductance
b
V
DS
=
–
10 V, I
D
=
–
0.1 A
V
DS
=
–
25 V, I
D
=
–
0.1 A
I
S
=
–
0.3 A, V
GS
= 0 V
170
100
g
fs
170
60
mS
Diode Forward Voltage
V
SD
–
0.9
–
1.2
V
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
30
70
130
Output Capacitance
V
DS
=
–
25 V, V
GS
= 0 V
f = 1 MHz
10
20
30
pF
Reverse Transfer Capacitance
Switching
c
3
10
15
t
d(on)
t
r
6
10
Turn-On Time
V
DD
=
–
25 V, R
L
= 250
I
–
0.1 A, V
=
–
10 V
D
R
G
= 25
8
15
ns
t
d(off)
t
f
18
17
30
25
Turn-Off Time
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDQ20
2%.
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