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參數(shù)資料
| 型號(hào)： | VP2106 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 456K |
| 代理商： | VP2106 |
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP2106
VP2110
Note: See Package Outline section for dimensions.
Package Options
P-Channel Enhancement-Mode
Vertical DMOS FETs
TO-92
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
BV
DSS
/
BV
DGS
-60V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
TO-236AB*
Die
12
-0.5A
VP2106N3
—
—
-100V
12
-0.5A
—
VP2110K1
VP2110ND
Product marking for SOT-23:
P1A
where
= 2-week alpha date code
Order Number / Package
MIL visual screening available.
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Ordering Information
S G D
TO-236AB
(SOT-23)
top view
S
D
G
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VP2106N3 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP2204N2 | TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 1.6A I(D) | TO-39 |
| VP2206N2 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 1.6A I(D) | TO-39 |
| VP2204ND | TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | CHIP |
| VP2204N3 | TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 650MA I(D) | TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP2106N3 | 功能描述:MOSFET 60V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP2106N3-G | 功能描述:MOSFET 60V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP2106N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP2106N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP2106N3-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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