參數(shù)資料
型號(hào)： VP2106
廠(chǎng)商： Supertex, Inc.
英文描述： P-Channel Enhancement-Mode Vertical DMOS FETs
中文描述： P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 456K
代理商： VP2106
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
VP2106/VP2110
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-236AB
-120mA
-400mA
200
350
-120mA
-400mA
TO-92
-0.25A
-0.8A
0.74W
125
170
-0.25A
-0.8A
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
VP2110
-100
VP2106
-60
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
-1.5
-3.5
V
V
GS
= V
DS
, I
D
= -1.0mA
I
D
= -1.0mA, V
GS
= V
DS
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -10V, V
DS
= -25V
V
GS
= -5V, I
D
= -0.1A
V
GS
= -10V, I
D
= -0.5A
V
GS
= -10V, I
D
= -0.5A
V
DS
= -25V, I
D
= -0.5A
Change in V
GS(th)
with Temperature
Gate Body Leakage
5.8
6.5
mV/
°
C
-1.0
-100
nA
Zero Gate Voltage Drain Current
-10
μ
A
I
D(ON)
R
DS(ON)
ON-State Drain Current
-0.50
-1.0
A
11
15
9.0
12
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.55
1.0
%/
°
C
150
200
m
Input Capacitance
45
60
Common Source Output Capacitance
22
30
pF
Reverse Transfer Capacitance
3
8
Turn-ON Delay Time
4
5
Rise Time
5
8
Turn-OFF Delay Time
5
9
Fall Time
4
8
Diode Forward Voltage Drop
-1.2
-2.0
V
I
SD
= -0.5A, V
GS
= 0V
I
SD
= -0.5A, V
GS
= 0V
Reverse Recovery Time
400
ns
Notes:
1.All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
BV
DSS
Drain-to-Source
Breakdown Voltage
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
I
D
= -1.0mA, V
GS
= 0V
-1 mA
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
DD
= -25V
I
D
= -0.5A
R
GEN
= 25
ns
相關(guān)PDF資料
PDF描述
VP2106N3 P-Channel Enhancement-Mode Vertical DMOS FETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VP2106N3 功能描述:MOSFET 60V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP2106N3-G 功能描述:MOSFET 60V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP2106N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VP2106N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VP2106N3-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
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