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參數(shù)資料
| 型號(hào)： | VP2106 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-60V,12Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管（擊穿電壓- 60V的，12Ω，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | VP2106 |
7-255
9
7
VP2106
VP2110
Note: See Package Outline section for dimensions.
Package Options
P-Channel Enhancement-Mode
Vertical DMOS FETs
Source
TO-92
Drain
Gate
TO-236AB
(SOT-23)
top view
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
BV
DSS
/
BV
DGS
-60V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
TO-236AB*
Die
12
12
-0.5A
VP2106N3
—
—
-100V
-0.5A
—
VP2110K1
VP2110ND
Product marking for SOT-23:
P1A
F
where
F
= 2-week alpha date code
Order Number / Package
MIL visual screening available.
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Ordering Information
S G D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VP2106 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP2106N3 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP2204N2 | TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 1.6A I(D) | TO-39 |
| VP2206N2 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 1.6A I(D) | TO-39 |
| VP2204ND | TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | CHIP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP2106N3 | 功能描述:MOSFET 60V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP2106N3-G | 功能描述:MOSFET 60V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP2106N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP2106N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP2106N3-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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