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參數(shù)資料
| 型號： | VP2020L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 200-V (D-S) MOSFETs |
| 中文描述： | P通道200 -五（副）的MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | VP2020L |
VP2020L, BSS92
Vishay Siliconix
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
www.vishay.com
11-1
P-Channel 200-V (D-S) MOSFETs
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VP2020L
–200
20 @ V
GS
= –4.5 V
20 @ V
GS
= –10 V
–0.8 to –2.5
–0.12
BSS92
–200
–0.8 to –2.8
–0.15
High-Side Switching
Secondary Breakdown Free: –220 V
Low On-Resistance: 11.5
Low-Power/Voltage Driven
Excellent Thermal Stability
Ease in Driving Switches
Full-Voltage Operation
Low Offset Voltage
Easily Driven Without Buffer
No High-Temperature
“Run-Away”
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
Power Supply, Converters
Motor Control
Switches
“S” VP
2020L
xxyy
TO-92-18CD
(TO-18 Lead Form)
Top View
S
G
D
1
2
3
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
BSS92
VP2020L
Device Marking
Front View
xxyy
= Date Code
“S” = Siliconix Logo
Front View
“S” BS
S92
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
Device Marking
Parameter
Symbol
VP2020L
BSS92
Unit
Drain-Source Voltage
V
DS
V
GS
–200
–200
Gate-Source Voltage
20
20
V
T
A
= 25 C
T
A
= 100 C
–0.12
–0.15
Continuous Drain Current
(T
J
= 150 C)
I
D
–0.08
–0.09
A
Pulsed Drain Current
a
I
DM
–0.48
–0.6
T
A
= 25 C
T
A
= 100 C
0.8
1.0
Power Dissipation
P
D
0.32
0.4
W
Thermal Resistance, Junction-to-Ambient
R
thJA
T
J
, T
stg
156
125
C/W
Operating Junction and Storage Temperature Range
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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