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參數(shù)資料
| 型號(hào)： | VMM85-02F |
| 英文描述： | TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 200V V(BR)DSS | 83A I(D) |
| 中文描述： | 晶體管| MOSFET功率模塊|半橋| 200伏五（巴西）直|第83A條（丁） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | VMM85-02F |
C3 - 19
VMM 85-02F
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol
Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5
I
D25
pulsed
40
60
S
C
iss
C
oss
C
rss
9600 15000
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1800
4500
pF
620
1500
pF
t
d(on)
t
r
t
d(off)
t
f
70
ns
V
GS
= 10 V, V
DS
= 0.5
V
DSS
, I
D
= 0.5
I
D25
R
G
= 1
(External), resistive load
80
ns
200
ns
100
ns
Q
g
Q
gs
Q
gd
380
450 nC
V
GS
= 10 V, V
DS
= 0.5
V
DSS
, I
D
= 0.5
I
D25
70
110 nC
190
230 nC
R
thJC
R
thCH
0.33 K/W
heatsink compound applied
0.2
K/W
d
S
d
A
a
Creepage distance on surface
12.7
mm
Strike distance through air
9.6
mm
Allowable acceleration
50m/s
2
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Conditions
typ.
max.
I
S
V
GS
= 0 V
84
A
I
SM
Repetitive; pulse width limited by T
JM
335
A
V
SD
I
= I
; V
= 0 V,
Pulse test, t
≤
300 μs, duty cycle d
≤
2%
0.9
1.2
V
t
rr
I
F
= I
S
, -di/dt = 100 A/μs, V
DS
= 100 V, V
GS
= 0 V
200
400
ns
Dimensions in mm (1 mm = 0.0394")
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