參數(shù)資料
型號(hào)： VMO380-02F
廠商： IXYS CORP
元件分類： JFETs
英文描述： MegaMOSTMFET Module
中文描述： 385 A, 200 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MODULE-4
文件頁數(shù)： 1/4頁
文件大?。?/td> 77K
代理商： VMO380-02F
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150°C
T
J
= 25
°
C to 150°C; R
GS
= 10 k
200
V
200
V
V
GS
V
GSM
Continuous
±
20
±
30
V
Transient
V
I
D25
I
DM
T
K
= 25
°
C
T
K
= 25
°
C, t
P
= 10
μ
s
385
A
1540
A
P
D
T
C
= 25
°
C
T
K
= 25
°
C
2230
1505
W
W
T
J
T
JM
T
stg
-40 ...+150
°
C
°
C
°
C
150
-40 ... +125
V
ISOL
50/60 Hz
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
M
d
Mounting torque (M6)
Terminal connection torque (M5)
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
Weight
typical including screws
250
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 12 mA
V
DS
= 20 V, I
D
= 120 mA
200
V
3
6
V
I
GSS
V
GS
=
±
20 V DC, V
DS
= 0
±
500
nA
I
DSS
V
DS
= V
,
V
DS
= 0.8 V
DSS
,
V
GS
= 0 V
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
2,5 mA
12 mA
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
4.6 m
1
2
11
10
MegaMOS
TM
FET
Module
VMO 380-02 F
V
DSS
I
D25
R
DS(on)
= 4.6 m
= 200 V
= 385 A
N-Channel Enhancement Mode
Preliminary data
1 = Drain
10 = Kelvin Source
2 = Source
11 = Gate
1
2
10
11
Features
G
International standard package
G
D
irect
C
opper
B
onded Al
2
O
3
ceramic
base plate
G
Isolation voltage 3600 V~
G
Low R
HDMOS
TM
process
G
Low package inductance for high
speed switching
G
Kelvin Source contact for easy drive
Applications
G
AC motor speed control for electric
vehicles
G
DC servo and robot drives
G
Switched-mode and resonant-mode
power supplies
G
DC choppers in fork lift trucks
Advantages
G
Easy to mount
G
Space and weight savings
G
High power density
G
Low losses
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