參數(shù)資料
型號(hào)： VMO580-02F
廠商： IXYS CORP
元件分類： JFETs
英文描述： HipPerFETTM Module
中文描述： 580 A, 200 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 49K
代理商： VMO580-02F
2000 IXYS All rights reserved
1 - 2
HipPerFET
TM
Module
V
DSS
I
D25
R
DS(on)
= 3.8 m
= 200 V
= 580 A
VMO 580-02F
MOSFET
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
200
V
V
GS
±20
V
I
D25
I
D80
T
C
= 25°C
T
C
= 80°C
580
430
A
A
I
F25
I
F80
(diode) T
C
= 25°C
(diode) T
C
= 80°C
580
430
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D80
3.2
3.8
m
V
GSth
V
DS
= 20 V;
I
D
= 50 mA
2
4
V
I
DSS
V
DS
= 0.8 V
DSS
;
V
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
2.6
mA
mA
3
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
1
μA
Q
g
Q
gs
Q
gd
2750
500
1350
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
210
500
900
350
ns
ns
ns
ns
V
F
(diode) I
F
= 300 A;
V
GS
= 0 V
0.9
1.1
V
t
rr
(diode) I
F
= 300 A;
-di/dt = 500 A/μs; V
DS
= V
DSS
300
ns
R
thJC
R
thJS
0.05 K/W
with heat transfer paste
0.07
K/W
Features
HiPerFET
TM
technology
- low R
- dv/dt ruggedness
- fast intrinsic reverse diode
package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate
Applications
converters with high power density for
- main and auxiliary AC drives of
electric vehicles
- DC drives
- power supplies
V
GS
= 10 V; V
DS
= 0.5 V
DSS
; I
D
= I
D80
V
= 10 V; V
= 0.5 V
DSS
;
I
D
= I
D80
; R
G
= 1
N-Channel Enhancement Mode
D
S
G
KS
D
S
G
KS
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary Data
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