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參數(shù)資料
| 型號： | VN0104 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓40V,N溝道增強型垂直DMOS結構場效應管) |
| 中文描述： | N溝道增強型場效應管垂直的DMOS（擊穿電壓40V的，?溝道增強型垂直的DMOS結構場效應管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | VN0104 |
7-151
7
VN0104
VN0106
VN0109
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note 1: See Package Outline section for dimensions.
Note 2: See Array section for quad pinout.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
N-Channel Enhancement-Mode
Vertical DMOS FET
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
14-Lead DIP
TO-92
S G D
TO-52
D G S
Case: DRAIN
Order Number / Package
BV
DSS
/ R
DS(ON)
I
D(ON)
BV
DGS
(max) (min)
40V
3.0
3.0
3.0
*
14 pin side brazed ceramic DIP
**14 pin plastic DIP
MIL visual screening available
TO-52
TO-92
Quad P-DIP**
Die
2.0A
—
VN0104N3
VN0104N6
—
60V
2.0A
—
VN0106N3
VN0106N6
—
90V
2.0A
VN0109N9
VN0109N3
—
VN0109ND
Ordering Information
相關PDF資料 |
PDF描述 |
|---|---|
| VN0104 | N-Channel Enhancement-Mode Vertical DMOS FET |
| VN0104N3 | N-Channel Enhancement-Mode Vertical DMOS FET |
| VN0109NE | N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array |
| VN0116ND | TRANSISTOR | MOSFET | N-CHANNEL | 160V V(BR)DSS | CHIP |
| VN0120ND | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VN0104N3 | 功能描述:MOSFET 40V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0104N3-G | 功能描述:MOSFET 40V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0104N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0104N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0104N3-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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