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參數(shù)資料
| 型號(hào)： | VN0104 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓40V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓40V的，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 29K |
| 代理商： | VN0104 |
7-152
VN0104/VN0106/VN0109
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
1.0W
θ
jc
°
C/W
125
125
θ
ja
°
C/W
170
170
I
DR
*
I
DRM
TO-52
TO-92
Plastic DIP
0.5A
0.5A
2.0A
2.0A
See DMOS Arrays & Special Functions section
0.5A
0.5A
2.0A
2.0A
* I
D
(continuous) is limited by max rated T
j
.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
BV
DSS
Parameter
Min
90
60
40
0.8
Typ
Max
Unit
Conditions
VN0109
VN0106
VN0104
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
2.4
-5.5
100
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 250mA
V
GS
= 10V, I
D
= 1A
V
GS
= 10V, I
D
= 1A
V
DS
= 25V, I
D
= 0.5A
-3.8
mV/
°
C
nA
1
100
μ
A
I
D(ON)
ON-State Drain Current
0.5
2.0
1.0
2.5
3.0
2.5
0.70
450
55
20
R
DS(ON)
5.0
3.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
1
%/
°
C
m
300
65
25
pF
5
3
5
6
5
8
5
8
9
8
1.2
400
1.8
V
ns
V
GS
= 0V, I
SD
=1.0A
V
GS
= 0V, I
SD
=1.0A
A
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 1mA
Drain-to-Source
Breakdown Voltage
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DD
= 25V
I
D
= 1A
R
GEN
= 25
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
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