參數(shù)資料
型號： VMO550-01F
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET MOSFET Module
中文描述： 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/2頁
文件大小： 46K
代理商： VMO550-01F
2000 IXYS All rights reserved
1 - 2
N-Channel Enhancement Mode
Preliminary Data
D = Drain
KS = Kelvin Source G = Gate
S = Source
D
S
KS
G
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 10 k
100
V
100
V
V
GS
V
GSM
Continuous
20
V
Transient
30
V
I
D25
I
D80
I
DM
T
S
= 25 C
T
S
= 80 C
T
S
= 25 C
590
440
A
A
pulse width limited by T
JM
2360
A
P
D
T
C
= 25 C
T
S
= 25 C
2200
1470
W
W
T
J
T
JM
T
stg
-40 ...+150
C
150
C
-40 ... +125
C
V
ISOL
50/60 Hz
I
ISOL
1 mA
t = 1 min
t = 1 s
3000
3600
V~
M
d
Mounting torque (M6)
Terminal connection torque (M5)
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
Weight
typical including screws
250
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 6 mA
V
DS
= 20 V, I
D
= 110 mA
100
V
3
6
V
I
GSS
V
GS
= 20 V DC, V
DS
= 0
500
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
3 mA
12 mA
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
2.1 m
Features
G
International standard package
G
D
irect
C
opper
B
onded Al
2
O
3
ceramic
base plate
G
Isolation voltage 3600 V~
G
Low R
HDMOS
TM
process
G
Low package inductance for high
speed switching
G
Kelvin Source contact for easy drive
Applications
G
AC motor speed control for electric
vehicles
G
DC servo and robot drives
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
Advantages
G
Easy to mount
G
Space and weight savings
G
High power density
G
Low losses
VMO 550-01F
V
DSS
I
D25
R
DS(on)
= 2.1 m
= 100 V
= 590 A
IXYS reserves the right to change limits, test conditions and dimensions.
E 72873
HiPerFET
TM
MOSFET Module
D
S
G
KS
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