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參數(shù)資料
| 型號： | VMO450-02F |
| 英文描述： | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 450A I(D) |
| 中文描述： | 晶體管| MOSFET功率模塊|獨立| 200伏五（巴西）直| 450A（丁） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 154K |
| 代理商： | VMO450-02F |
1999 IXYS All rights reserved
C3 - 14
C3
D
S
G
KS
Symbol
Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150°C
T
J
= 25
°
C to 150°C; R
GS
= 10 k
200
V
200
V
V
GS
V
GSM
Continuous
±
20
±
30
V
Transient
V
I
D25
I
D80
I
DM
T
C
= 25
°
C
T
C
= 80
°
C
T
C
= 25
°
C, t
P
= 10
μ
s
450
A
340
A
1800
A
P
D
T
C
= 25
°
C
2000
W
T
J
T
JM
T
stg
-40 ...+150
°
C
°
C
°
C
150
-40 ... +125
V
ISOL
50/60 Hz
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
M
d
Mounting torque (M6)
Terminal connection torque (M5)
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
Weight
typical including screws
250
g
V
DSS
I
D25
R
DS(on) typ
= 3.8 m
W
= 200 V
= 450 A
N-Channel Enhancement Mode
Features
l
International standard package
l
D
irect
C
opper
B
onded Al
2
O
3
ceramic
base plate
l
Low R
HDMOS
TM
process
l
Low package inductance for high
speed switching
l
Kelvin Source contact for easy drive
Applications
l
AC motor speed control for electric
vehicles
l
DC servo and robot drives
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
Advantages
l
Easy to mount
l
Space and weight savings
l
High power density
l
Low losses
D = Drain
Source
KS = Kelvin Source
Gate
S =
G =
D
S
KS
G
Symbol
Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 12 mA
V
DS
= 20 V, I
D
= 40 mA
V
GS
=
±
20 V DC, V
DS
= 0
200
V
2
4
V
I
GSS
±
500
nA
I
DSS
V
DS
= 0.8 V
DSS
,
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
2.2 mA
11 mA
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
3.8
4.6 m
MegaMOS
TM
FET
Module
VMO 450-02F
Additional current limitation by external leads
E 72873
9
IXYS reserves the right to change limits, test conditions and dimensions.
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