參數(shù)資料
型號: VG26VS17405DT-5
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 4M X 4 EDO DRAM, 50 ns, PDSO24
封裝: 0.300 INCH, PLASTIC, TSOP2-26/24
文件頁數(shù): 20/27頁
文件大?。?/td> 253K
代理商: VG26VS17405DT-5
Document:1G5-0124
Rev.1
Page 27
VIS VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Ordering information
VG26(V)(S) 17405EJ-5
VG
VIS Memory Product
26
Technology
V
3.3V Version
S
Self refresh
17405
Device Type and Configuation
E
Revision
J
Package Type (J : SOJ, T : TSOP II)
5
Speed (5 : 50 ns, 6 : 60 ns)
Part Number
Access time
Package
VG26(V)(S)17405DJ-5
VG26(V)(S)17405DJ-6
VG26(V)(S)17405EJ-5
VG26(V)(S)17405EJ-6
50 ns
60 ns
50 ns
60 ns
300mil 26/24-Pin
Plastic SOJ
Packaging information
300 mil, 26/24-Pin Plastic SOJ
SEATING PLANE
4-e
e
b
b2
0.007" M
C
L
0.025" MIN.
0.004"
SECTION B-B
E2
A
RAD R1
A1
B
D
26
21
E
E1
19
14
BASE METAL
WITH PLATING
c1 c
b1
b
0.267 BASIC
0.335 BASIC
0.050 BASIC
R1
e
E1
E2
6.78 BASIC
1.27 BASIC
0.76
---
7.49
7.62
1.02
0.030
7.75
0.295
17.02
b
D
E
c1
b2
c
b1
A1
A
DIM
0.51
0.41
0.016
8.51 BASIC
0.18
17.15
---
0.66
0.18
0.41
---
0.46
17.27
0.28
0.670
0.007
0.81
0.30
0.48
0.007
0.026
0.016
MILLIMETERS
MIN.
NOM.
2.08
3.25
---
3.51
MAX.
MIN.
---
3.76
0.082
0.128
0.305
0.040
---
0.300
0.020
0.032
0.019
0.012
0.680
0.011
0.675
---
0.018
---
MAX.
0.148
---
NOM.
---
0.138
---
INCHES
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.006"(0.15mm) PER SIDE.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.01"(0.25mm) PER SIDE.
1. CONTROLLING DIMENSION : INCHES
NOTE:
3. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION OR
TO LESS THAN 0.001"(0.025mm) BELOW b2 MIN.
DAMBAR INTRUSION SHALL NOT REDUCE THE SHOULDER WIDTH
SHOULDER WIDTH TO EXCEED b2 MAX BY MORE THAN 0.005"(0.127mm)
INTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE
1
6
8
13
A2
2.54 REF.
0.100 REF.
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