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參數(shù)資料
| 型號： | V53C8258L |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | Ultra-High Speed,3.3 Volt 256K x 8 Bit EDO Page Mode CMOS Dynamic RAM(3.3V超高速256Kx8EDO頁面模式CMOS動態(tài)RAM) |
| 中文描述： | 超高速，3.3伏特256K × 8位EDO公司頁面模式的CMOS動態(tài)RAM（3.3超高速256Kx8EDO頁面模式的CMOS動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 5/18頁 |
| 文件大?。?/td> | 144K |
| 代理商： | V53C8258L |
MOSEL V ITELIC
V53C8258L
5
V53C8258L Rev. 1.4 February 1999
AC Characteristics
T
A
= 0
°
C to 70
AC Test conditions, input pulse levels 0 to 3V
°
C, V
CC
= 3.3 V
±
0.3V, V
SS
= 0V unless otherwise noted
#
JEDEC
Symbol
Symbol
Parameter
60
Unit
Notes
Min.
Max.
1
t
RL1RH1
t
RAS
RAS Pulse Width
60
75K
ns
2
t
RL2RL2
t
RC
Read or Write Cycle Time
120
ns
3
t
RH2RL2
t
RP
RAS Precharge Time
50
ns
4
t
RL1CH1
t
CSH
CAS Hold Time
60
ns
5
t
CL1CH1
t
CAS
CAS Pulse Width
10
ns
6
t
RL1CL1
t
RCD
RAS to CAS Delay
20
45
ns
7
t
WH2CL2
t
RCS
Read Command Setup Time
0
ns
4
8
t
AVRL2
t
ASR
Row Address Setup Time
0
ns
9
t
RL1AX
t
RAH
Row Address Hold Time
10
ns
10
t
AVCL2
t
ASC
Column Address Setup Time
0
ns
11
t
CL1AX
t
CAH
Column Address Hold Time
10
ns
12
t
CL1RH1(R)
t
RSH (R)
RAS Hold Time (Read Cycle)
14
ns
13
t
CH2RL2
t
CRP
CAS to RAS Precharge Time
5
ns
14
t
CH2WX
t
RCH
Read Command Hold Time Referenced to CAS
0
ns
5
15
t
RH2WX
t
RRH
Read Command Hold Time Referenced to RAS
0
ns
5
16
t
OEL1RH2
t
ROH
RAS Hold Time Referenced to OE
10
ns
17
t
GL1QV
t
OAC
Access Time from OE
15
ns
18
t
CL1QV
t
CAC
Access Time from CAS (EDO)
15
ns
6, 7
19
t
RL1QV
t
RAC
Access Time from RAS
60
ns
6, 8, 9
20
t
AVQV
t
CAA
Access Time from Column Address
30
ns
6, 7, 10
21
t
CL1QX
t
LZ
CAS to Low-Z Output
0
ns
16
22
t
CH2QZ
t
HZ
Output buffer turn-off delay time
0
10
ns
16
23
t
RL1AX
t
AR
Column Address Hold Time from RAS
50
ns
24
t
RL1AV
t
RAD
RAS to Column Address Delay Time
15
30
ns
11
25
t
CL1RH1(W)
t
RSH (W)
RAS or CAS Hold Time in Write Cycle
15
ns
26
t
WL1CH1
t
CWL
Write Command to CAS Lead Time
15
ns
27
t
WL1CL2
t
WCS
Write Command Setup Time
0
ns
12, 13
28
t
CL1WH1
t
WCH
Write Command Hold Time
10
ns
29
t
WL1WH1
t
WP
Write Pulse Width
10
ns
30
t
RL1WH1
t
WCR
Write Command Hold Time from RAS
50
ns
31
t
WL1RH1
t
RWL
Write Command to RAS Lead Time
15
ns
32
t
DVWL2
t
DS
Data in Setup Time
0
ns
14
33
t
WL1DX
t
DH
Data in Hold Time
10
ns
14
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