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參數(shù)資料
| 型號： | TSM2N60CZ |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 600V N-Channel Power MOSFET |
| 中文描述： | 600V的N溝道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 387K |
| 代理商： | TSM2N60CZ |
TSM2N60
600V N-Channel Power MOSFET
2/8
Version: A07
Thermal Performance
Parameter
Symbol
Limit
2.87
2.32
110
62.5
Unit
TO-251 / TO-252
TO-220
TO-251 / TO-252
TO-220
Thermal Resistance - Junction to Case
R
JC
o
C/W
Thermal Resistance - Junction to Ambient
R
JA
o
C/W
Notes: Surface mounted on FR4 board t
≤
10sec
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 1A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 600V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 40V, I
D
= 1A
I
S
= 2A, V
GS
= 0V
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
600
--
2.0
--
--
--
--
--
--
--
--
--
5
--
--
4.4
4.0
10
± 100
--
1.6
V
Ω
V
uA
nA
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
13
2
6
435
56
9.2
22
--
--
--
--
--
V
DS
= 400V, I
D
= 2A,
V
GS
= 10V
nC
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
pF
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
12
21
30
24
--
--
--
--
V
GS
= 10V, I
D
= 2A,
V
DD
= 300V, R
G
= 18
Ω
nS
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