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參數(shù)資料
| 型號： | TSM2N60CZ |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 600V N-Channel Power MOSFET |
| 中文描述： | 600V的N溝道功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 387K |
| 代理商： | TSM2N60CZ |
TSM2N60
600V N-Channel Power MOSFET
1/8
Version: A07
TO-220
TO-251
(IPAK)
TO-252
(DPAK)
General Description
The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
●
●
●
●
discrete fast recovery diode.
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
Ordering Information
Part No.
TSM2N60CP RO
TSM2N60CH C5
TSM2N60CZ C0
Package
TO-252
TO-251
TO-220
Packing
2.5Kpcs/ 13” Reel
80pcs / Tube
50pcs / Tube
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25
Ω
)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
600
±30
2
9
1
Unit
V
V
A
A
A
EAS
20
mJ
TO-251 / TO-252
TO-220
2.5
54
+150
Maximum Power Dissipation @Ta = 25
o
C
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
o
C
o
C
T
J
, T
STG
-55 to +150
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
600
4.4 @ V
GS
=10V
1
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET
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| TSM2N60 | N CHANNEL POWER ENHANCEMENT MODE MOSFET |
| TSM2N60CH | N CHANNEL POWER ENHANCEMENT MODE MOSFET |
| TSM2N60CP | N CHANNEL POWER ENHANCEMENT MODE MOSFET |
| TSM2N7000CT | 60V N-Channel MOSFET |
| TSM2N7000 | 60V N-Channel Enhancement Mode MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSM2N60SCW | 功能描述:MOSFET 600V 2Amp N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM2N7000CT | 功能描述:MOSFET 60V 0.2A 0.35W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM2N7000CT A3 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo |
| TSM2N7000KCT | 功能描述:MOSFET 60V 0.2Amp N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM2N7000KCT A3 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 60V 0.3A Ammo 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo |
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