參數(shù)資料
型號： TPS56100PWPR
元件分類： 基準電壓源/電流源
英文描述： Voltage-Mode SMPS Controller
中文描述： 電壓模式開關電源控制器
文件頁數(shù)： 22/34頁
文件大?。?/td> 811K
代理商： TPS56100PWPR
TPS56302
DUAL-OUTPUT LOW-INPUT-VOLTAGE
DSP POWER SUPPLY CONTROLLER WITH SEQUENCING
SLVS289A
–
MARCH 2000
–
REVISED OCTOBER 2000
22
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
Table 3. Ripple Regulator Power Stage Components
Ripple Regulator Section
8A
C3: 150
μ
F
C6: 150
μ
F
(Sanyo,
6TPB150M)
C2: 0.1
μ
F
C11: 0.1
μ
F
(muRata
GRM39X7R104K016A,
0.1
μ
F, 16
–
V, X7R)
C13: 150
μ
F
(Sanyo, 6TPB150M)
C14: open
Ref Des
Function
4A (EVM Design)
12A
20A
C3, C6
Input bulk
capacitor
C3: open
C6: 150
μ
F
(Sanyo,
6TPB150M)
C2: 0.1
μ
F
C11: 0.1
μ
F
(muRata
GRM39X7R104K016A,
0.1
μ
F, 16
–
V, X7R)
C13: 150
μ
F
(Sanyo, 6TPB150M)
C14: open
C3: 150
μ
F
C6: 150
μ
F
(Sanyo,
6TPB150M)
C2: 0.1
μ
F
C11: 0.1
μ
F
(muRata
GRM39X7R104K016A, 0.1
μ
F, 16
–
V, X7R)
C13: 150
μ
F
C14: 150
μ
F
(Sanyo, 6TPB150M)
C3: 150
μ
F
C6: 2x150
μ
F
(Sanyo,
6TPB150M)
C2: 0.33
μ
F
C11: 0.33
μ
F
(muRata
GRM39X7R334K016A,
0.33
μ
F, 16
–
V, X7R)
C13: 150
μ
F
C14: 150
μ
F
(Sanyo, 6TPB150M)
C11, C2
Input high-freq
capacitor
C13, C14
Output bulk
capacitor
C15,C30,
C31
Output mid-freq
capacitor
C15: open
C30: 10
μ
F
C31: 10
μ
F
(muRata
GRM39X7R106K016A,
10
μ
F, 16
–
V, X7R)
open
C15: open
C30: 10
μ
F
C31: 10
μ
F
(muRata
GRM39X7R106K016A,
10
μ
F, 16
–
V, X7R)
0.1
μ
F
(muRata
GRM39X7R104K016A,
0.1
μ
F, 16
–
V, X7R)
3.3
μ
H
Coilcraft
DO3316P
–
332,5.4 A
C15: 10
μ
F
C30: 10
μ
F
C31: 10
μ
F
(muRata
GRM39X7R106K016A, 10
μ
F, 16
–
V, X7R)
0.1
μ
F
(muRata
GRM39X7R104K016A, 0.1
μ
F, 16
–
V, X7R)
1.5
μ
H
Coilcraft
DO3316P
–
152,6.4 A
C15: 10
μ
F
C30: 10
μ
F
C31: 10
μ
F
(muRata
GRM39X7R106K016A,
10
μ
F, 16
–
V, X7R)
0.1
μ
F
(muRata
GRM39X7R104K016A,
0.1
μ
F, 16
–
V, X7R)
1
μ
H
Coiltronics
UP3B
–
1R0, 12.5
–
A
C16
Output high-freq
capacitor
L1
Input filter
3.3
μ
H
Coilcraft
DO3316P
–
332, 5.4 A
L2
Output filter
3.3
μ
H
Coilcraft
DO3316P
–
332, 5.4 A
3.3
μ
H
Coilcraft
DO5022P
–
332HC, 10 A
1.5
μ
H
Coilcraft
DO5022P
–
152HC,
15 A
5.1
3.3
μ
H
Micrometals,
T68
–
8/90 Core w/7T,
#16, 25 A
5.1
R8
Low side gate
resistor
10
10
Q1A,Q4
Power switch
Q1A: Dual FET
IRF7311
Q4: IRF7811
Q4: 2xIRF7811
Q4: 2xIRF7811
Q1B,Q5
Synchronous
switch
Q1B: Dual FET
IRF7311
Q5: IRF7811
Q5: 2xIRF7811
Q5:
2xIRF7811
Position available on the EVM board
The values listed in Table 3 are recommendations based on actual test circuits. Many variations of the above
are possible based upon the desires and/or requirements of the user. Performance of the circuit is equally, if
not more, dependent upon the layout than on the specific components, as long as the device parameters are
not exceeded. Fast-response, low-noise circuits require circuits require critical attention to the layout details.
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